Photo-assisted thermally oxidized GaAs insulator layers deposited by photo-CVD

C. H. Liu, T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, J. J. Tang, B. R. Huang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Photo-assisted thermally oxidized GaAs insulator layers are deposited by photo-chemical vapor deposition (photo-CVD) using a deuterium (D2) lamp as the excitation source. From AFM figure of thermally oxidized layers, the optimum roughness was 0.166 nm with process pressure of 1 Torr. Furthermore, from the analysis of XPS spectra thermally oxidized film produced Ga-rich oxide and composed of Ga2O3 with a small amount of As2 O3. With a 1 MV/cm applied electric field, it is found that the leakage current density of thermally oxidized GaAs capacitor is 1 × 10-7 A/cm2. It is found that the interface state density, Dit, is equal to 4.52 × 1011 cm-2 eV-1. The Dit is also found to be small for implementation of oxide-GaAs interface and the quality of gate oxide class for GaAs MOSFET capacitors.

Original languageEnglish
Pages (from-to)3250-3253
Number of pages4
JournalSurface and Coatings Technology
Volume200
Issue number10 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Feb 24

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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