Photo-assisted thermally oxidized GaAs insulator layers deposited by photo-CVD

C. H. Liu; T. K. Lin; S. J. Chang; Y. K. Su; Y. Z. Chiou; C. K. Wang; S. P. Chang; J. J. Tang; B. R. Huang

doi:10.1016/j.surfcoat.2005.07.024

Photo-assisted thermally oxidized GaAs insulator layers deposited by photo-CVD

C. H. Liu, T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, J. J. Tang, B. R. Huang

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Photo-assisted thermally oxidized GaAs insulator layers are deposited by photo-chemical vapor deposition (photo-CVD) using a deuterium (D₂) lamp as the excitation source. From AFM figure of thermally oxidized layers, the optimum roughness was 0.166 nm with process pressure of 1 Torr. Furthermore, from the analysis of XPS spectra thermally oxidized film produced Ga-rich oxide and composed of Ga₂O₃ with a small amount of As₂ O₃. With a 1 MV/cm applied electric field, it is found that the leakage current density of thermally oxidized GaAs capacitor is 1 × 10^-7 A/cm². It is found that the interface state density, D_it, is equal to 4.52 × 10¹¹ cm^-2 eV^-1. The D_it is also found to be small for implementation of oxide-GaAs interface and the quality of gate oxide class for GaAs MOSFET capacitors.

Original language	English
Pages (from-to)	3250-3253
Number of pages	4
Journal	Surface and Coatings Technology
Volume	200
Issue number	10 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2005.07.024
Publication status	Published - 2006 Feb 24

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Photo-assisted thermally oxidized GaAs insulator layers deposited by photo-CVD",

abstract = "Photo-assisted thermally oxidized GaAs insulator layers are deposited by photo-chemical vapor deposition (photo-CVD) using a deuterium (D2) lamp as the excitation source. From AFM figure of thermally oxidized layers, the optimum roughness was 0.166 nm with process pressure of 1 Torr. Furthermore, from the analysis of XPS spectra thermally oxidized film produced Ga-rich oxide and composed of Ga2O3 with a small amount of As2 O3. With a 1 MV/cm applied electric field, it is found that the leakage current density of thermally oxidized GaAs capacitor is 1 × 10-7 A/cm2. It is found that the interface state density, Dit, is equal to 4.52 × 1011 cm-2 eV-1. The Dit is also found to be small for implementation of oxide-GaAs interface and the quality of gate oxide class for GaAs MOSFET capacitors.",

author = "Liu, {C. H.} and Lin, {T. K.} and Chang, {S. J.} and Su, {Y. K.} and Chiou, {Y. Z.} and Wang, {C. K.} and Chang, {S. P.} and Tang, {J. J.} and Huang, {B. R.}",

year = "2006",

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doi = "10.1016/j.surfcoat.2005.07.024",

language = "English",

volume = "200",

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journal = "Surface and Coatings Technology",

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T1 - Photo-assisted thermally oxidized GaAs insulator layers deposited by photo-CVD

AU - Liu, C. H.

AU - Lin, T. K.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chiou, Y. Z.

AU - Wang, C. K.

AU - Chang, S. P.

AU - Tang, J. J.

AU - Huang, B. R.

PY - 2006/2/24

Y1 - 2006/2/24

N2 - Photo-assisted thermally oxidized GaAs insulator layers are deposited by photo-chemical vapor deposition (photo-CVD) using a deuterium (D2) lamp as the excitation source. From AFM figure of thermally oxidized layers, the optimum roughness was 0.166 nm with process pressure of 1 Torr. Furthermore, from the analysis of XPS spectra thermally oxidized film produced Ga-rich oxide and composed of Ga2O3 with a small amount of As2 O3. With a 1 MV/cm applied electric field, it is found that the leakage current density of thermally oxidized GaAs capacitor is 1 × 10-7 A/cm2. It is found that the interface state density, Dit, is equal to 4.52 × 1011 cm-2 eV-1. The Dit is also found to be small for implementation of oxide-GaAs interface and the quality of gate oxide class for GaAs MOSFET capacitors.

AB - Photo-assisted thermally oxidized GaAs insulator layers are deposited by photo-chemical vapor deposition (photo-CVD) using a deuterium (D2) lamp as the excitation source. From AFM figure of thermally oxidized layers, the optimum roughness was 0.166 nm with process pressure of 1 Torr. Furthermore, from the analysis of XPS spectra thermally oxidized film produced Ga-rich oxide and composed of Ga2O3 with a small amount of As2 O3. With a 1 MV/cm applied electric field, it is found that the leakage current density of thermally oxidized GaAs capacitor is 1 × 10-7 A/cm2. It is found that the interface state density, Dit, is equal to 4.52 × 1011 cm-2 eV-1. The Dit is also found to be small for implementation of oxide-GaAs interface and the quality of gate oxide class for GaAs MOSFET capacitors.

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SN - 0257-8972

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