Photo-CVD SiO2 layers on AlGaN and AlGaN-GaN MOSHFET

Y. Z. Chiou, S. J. Chang, Y. K. Su, C. K. Wang, T. K. Lin, Bohr Ran Huang

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Abstract

High-quality SiO2 was successfully deposited onto AlGaN by photochemical vapor deposition (photo-CVD) using a D2 lamp as the excitation source. The resulting interface state density was only 1.1 × 1011 cm-2eV-1, and the oxide leakage current was dominated by Poole-Frenkel emission. Compared with AlGaN-GaN metal-semiconductor HFET (MESHFETs) with similar structure, the gate leakage current is reduced by more than four orders of magnitude by using the photo-CVD oxide layer as gate oxide in AlGaN-GaN metal-oxide-semiconductor heterojunction field-effect transistors (MOSHFETs). With a 2-μm gate, the saturated I ds, maximum gm and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET were 572 mA/mm, 68 mS/mm, and 8 V, respectively.

Original languageEnglish
Pages (from-to)1748-1752
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume50
Issue number8
DOIs
Publication statusPublished - 2003 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Chiou, Y. Z., Chang, S. J., Su, Y. K., Wang, C. K., Lin, T. K., & Huang, B. R. (2003). Photo-CVD SiO2 layers on AlGaN and AlGaN-GaN MOSHFET. IEEE Transactions on Electron Devices, 50(8), 1748-1752. https://doi.org/10.1109/TED.2003.815147