Photo-electrical properties of MgZnO thin-film transistors with high-k dielectrics

Jyun Yi Li; Sheng Po Chang; Ming Hung Hsu; Shoou Jinn Chang

doi:10.1109/LPT.2017.2774272

Photo-electrical properties of MgZnO thin-film transistors with high-k dielectrics

Jyun Yi Li, Sheng Po Chang, Ming Hung Hsu, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this letter, magnesium zinc oxide (MgZnO) was deposited to fabricate a thin-film transistor (TFT) by radio-frequency magnetron sputtering. We used alumina as MgZnO TFT gate insulator layer via an atomic layer deposition method. The MgZnO TFT with Al2O3 insulator could exhibit a mobility of 7.73 cm2/Vs, threshold voltage of 4.2 V, and subthreshold swing of 0.29 V/decade. Compared with our previous published study, the current switching ratio was improved by nearly two orders of magnitude. Furthermore, the hysteresis phenomenon had been investigated and the results showed that the high-k gate insulator could improve the interface state caused by the traps.

Original language	English
Pages (from-to)	59-62
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	30
Issue number	1
DOIs	https://doi.org/10.1109/LPT.2017.2774272
Publication status	Published - 2018 Jan

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2017.2774272

Fingerprint Dive into the research topics of 'Photo-electrical properties of MgZnO thin-film transistors with high-k dielectrics'. Together they form a unique fingerprint.

Cite this

@article{bd8598c7ab8947878c95ff620ca151c2,

title = "Photo-electrical properties of MgZnO thin-film transistors with high-k dielectrics",

abstract = "In this letter, magnesium zinc oxide (MgZnO) was deposited to fabricate a thin-film transistor (TFT) by radio-frequency magnetron sputtering. We used alumina as MgZnO TFT gate insulator layer via an atomic layer deposition method. The MgZnO TFT with Al2O3 insulator could exhibit a mobility of 7.73 cm2/Vs, threshold voltage of 4.2 V, and subthreshold swing of 0.29 V/decade. Compared with our previous published study, the current switching ratio was improved by nearly two orders of magnitude. Furthermore, the hysteresis phenomenon had been investigated and the results showed that the high-k gate insulator could improve the interface state caused by the traps.",

author = "Li, {Jyun Yi} and Chang, {Sheng Po} and Hsu, {Ming Hung} and Chang, {Shoou Jinn}",

year = "2018",

month = jan,

doi = "10.1109/LPT.2017.2774272",

language = "English",

volume = "30",

pages = "59--62",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Photo-electrical properties of MgZnO thin-film transistors with high-k dielectrics

AU - Li, Jyun Yi

AU - Chang, Sheng Po

AU - Hsu, Ming Hung

AU - Chang, Shoou Jinn

PY - 2018/1

Y1 - 2018/1

N2 - In this letter, magnesium zinc oxide (MgZnO) was deposited to fabricate a thin-film transistor (TFT) by radio-frequency magnetron sputtering. We used alumina as MgZnO TFT gate insulator layer via an atomic layer deposition method. The MgZnO TFT with Al2O3 insulator could exhibit a mobility of 7.73 cm2/Vs, threshold voltage of 4.2 V, and subthreshold swing of 0.29 V/decade. Compared with our previous published study, the current switching ratio was improved by nearly two orders of magnitude. Furthermore, the hysteresis phenomenon had been investigated and the results showed that the high-k gate insulator could improve the interface state caused by the traps.

AB - In this letter, magnesium zinc oxide (MgZnO) was deposited to fabricate a thin-film transistor (TFT) by radio-frequency magnetron sputtering. We used alumina as MgZnO TFT gate insulator layer via an atomic layer deposition method. The MgZnO TFT with Al2O3 insulator could exhibit a mobility of 7.73 cm2/Vs, threshold voltage of 4.2 V, and subthreshold swing of 0.29 V/decade. Compared with our previous published study, the current switching ratio was improved by nearly two orders of magnitude. Furthermore, the hysteresis phenomenon had been investigated and the results showed that the high-k gate insulator could improve the interface state caused by the traps.

UR - http://www.scopus.com/inward/record.url?scp=85035809604&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85035809604&partnerID=8YFLogxK

U2 - 10.1109/LPT.2017.2774272

DO - 10.1109/LPT.2017.2774272

M3 - Article

AN - SCOPUS:85035809604

VL - 30

SP - 59

EP - 62

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 1

ER -