Photo-enhanced chemical wet etching of GaN

C. H. Ko; Y. K. Su; S. J. Chang; W. H. Lan; Jim Webb; M. C. Tu; Y. T. Cherng

doi:10.1016/S0921-5107(02)00323-9

Photo-enhanced chemical wet etching of GaN

C. H. Ko, Y. K. Su, S. J. Chang, W. H. Lan, Jim Webb, M. C. Tu, Y. T. Cherng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

In this paper, we report a photo-enhanced chemical etch rate study on two GaN samples of differing structural and electrical quality as a function of the KOH or H₃PO₄ etch solution molarity. The etch rate of KOH was observed to be higher than that of H₃PO₄. This was found to be result from the effects of surface band bending, and surface pinning on the chemical etching and photo-assisted etching of the layers. It was also found that the optimal etch rate occurred at different values of molarity for the two samples and that very different morphologies were observed after etching.

Original language	English
Pages (from-to)	43-47
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	96
Issue number	1
DOIs	https://doi.org/10.1016/S0921-5107(02)00323-9
Publication status	Published - 2002 Oct 1

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Photo-enhanced chemical wet etching of GaN",

abstract = "In this paper, we report a photo-enhanced chemical etch rate study on two GaN samples of differing structural and electrical quality as a function of the KOH or H3PO4 etch solution molarity. The etch rate of KOH was observed to be higher than that of H3PO4. This was found to be result from the effects of surface band bending, and surface pinning on the chemical etching and photo-assisted etching of the layers. It was also found that the optimal etch rate occurred at different values of molarity for the two samples and that very different morphologies were observed after etching.",

author = "Ko, {C. H.} and Su, {Y. K.} and Chang, {S. J.} and Lan, {W. H.} and Jim Webb and Tu, {M. C.} and Cherng, {Y. T.}",

note = "Funding Information: This work is partially supported by the National Science Council of the Republic of China under contract number NSC-88-2215-E-006-005 and Materials and Electro-Optics Research Division of Chung-Shan Institute of Science and Technology for supporting the samples and experiment equipment.",

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T1 - Photo-enhanced chemical wet etching of GaN

AU - Ko, C. H.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Lan, W. H.

AU - Webb, Jim

AU - Tu, M. C.

AU - Cherng, Y. T.

N1 - Funding Information: This work is partially supported by the National Science Council of the Republic of China under contract number NSC-88-2215-E-006-005 and Materials and Electro-Optics Research Division of Chung-Shan Institute of Science and Technology for supporting the samples and experiment equipment.

PY - 2002/10/1

Y1 - 2002/10/1

N2 - In this paper, we report a photo-enhanced chemical etch rate study on two GaN samples of differing structural and electrical quality as a function of the KOH or H3PO4 etch solution molarity. The etch rate of KOH was observed to be higher than that of H3PO4. This was found to be result from the effects of surface band bending, and surface pinning on the chemical etching and photo-assisted etching of the layers. It was also found that the optimal etch rate occurred at different values of molarity for the two samples and that very different morphologies were observed after etching.

AB - In this paper, we report a photo-enhanced chemical etch rate study on two GaN samples of differing structural and electrical quality as a function of the KOH or H3PO4 etch solution molarity. The etch rate of KOH was observed to be higher than that of H3PO4. This was found to be result from the effects of surface band bending, and surface pinning on the chemical etching and photo-assisted etching of the layers. It was also found that the optimal etch rate occurred at different values of molarity for the two samples and that very different morphologies were observed after etching.

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Photo-enhanced chemical wet etching of GaN

Abstract

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