Photo-Enhanced Native Oxidation Process for Hg0.8Cd0.2Te Photoconductors

S. J. Chang; Y. K. Su; F. S. Juang; C. T. Lin; Chang Der Chiang; Ya Tung Cherng

doi:10.1109/3.842100

Photo-Enhanced Native Oxidation Process for Hg_0.8Cd_0.2Te Photoconductors

S. J. Chang, Y. K. Su, F. S. Juang, C. T. Lin, Chang Der Chiang, Ya Tung Cherng

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The aim of this paper is to propose an easy and reproducible vapor-phase photo surface treatment method to improve the device performance of the Hg_0.8 Cd_0.2Te photoconductive detector. We explore the effect of surface passivation on the electrical and optical properties of the HgCdTe photoconductor. Experimental results, including surface mobility, surface carrier concentration, metal-insulator-semicotiductor leakage current, 1/f noise voltage spectrum, the 1/f knee frequency, responsivity R_λ, and specific detectivity D* for stacked photo surface treatment and ZnS or CdTe passivation layers are presented. These data are all directly related to the quality of the interface between the passivation layer and the HgCdTe substrate. We found that, by inserting a photo native oxide layer, we can shift the 1/f knee frequency, reduce the noise power spectrum, and achieve a lower surface recombination velocity S. A higher D* can also be achieved. It was also found that HgCdTe photoconductors passivated with stacked layers show improved interface properties compared to the photoconductors passivated only with a single ZnS or CdTe layer.

Original language	English
Pages (from-to)	583-589
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	36
Issue number	5
DOIs	https://doi.org/10.1109/3.842100
Publication status	Published - 2000 May

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/3.842100

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title = "Photo-Enhanced Native Oxidation Process for Hg0.8Cd0.2Te Photoconductors",

abstract = "The aim of this paper is to propose an easy and reproducible vapor-phase photo surface treatment method to improve the device performance of the Hg0.8 Cd0.2Te photoconductive detector. We explore the effect of surface passivation on the electrical and optical properties of the HgCdTe photoconductor. Experimental results, including surface mobility, surface carrier concentration, metal-insulator-semicotiductor leakage current, 1/f noise voltage spectrum, the 1/f knee frequency, responsivity Rλ, and specific detectivity D* for stacked photo surface treatment and ZnS or CdTe passivation layers are presented. These data are all directly related to the quality of the interface between the passivation layer and the HgCdTe substrate. We found that, by inserting a photo native oxide layer, we can shift the 1/f knee frequency, reduce the noise power spectrum, and achieve a lower surface recombination velocity S. A higher D* can also be achieved. It was also found that HgCdTe photoconductors passivated with stacked layers show improved interface properties compared to the photoconductors passivated only with a single ZnS or CdTe layer.",

author = "Chang, {S. J.} and Su, {Y. K.} and Juang, {F. S.} and Lin, {C. T.} and Chiang, {Chang Der} and Cherng, {Ya Tung}",

note = "Funding Information: Manuscript received May 10, 1999; revised January 18, 2000. This work was supported by the Chung Shan Institute of Science and Technology under Contract NSC 85-2623-D-006-004 and by the National Science Council, R.O.C., under Contract NSC 85-2215-E-006-004. S. J. Chang, Y. K. Su, and C. T. Lin are with the Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C. F. S. Juang is with the Department of Electro-Optics Engineering, National Huwei Institute of Technolgoy, Huwei, Taiwan 632, R.O.C. C. D. Chiang and Y.-T. Cherng are with the Chung Shan Institute of Science and Technology, Lung-Tan, Taiwan 325, R.O.C. Publisher Item Identifier S 0018-9197(00)03531-4.",

year = "2000",

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doi = "10.1109/3.842100",

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T1 - Photo-Enhanced Native Oxidation Process for Hg0.8Cd0.2Te Photoconductors

AU - Chang, S. J.

AU - Su, Y. K.

AU - Juang, F. S.

AU - Lin, C. T.

AU - Chiang, Chang Der

AU - Cherng, Ya Tung

N1 - Funding Information: Manuscript received May 10, 1999; revised January 18, 2000. This work was supported by the Chung Shan Institute of Science and Technology under Contract NSC 85-2623-D-006-004 and by the National Science Council, R.O.C., under Contract NSC 85-2215-E-006-004. S. J. Chang, Y. K. Su, and C. T. Lin are with the Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C. F. S. Juang is with the Department of Electro-Optics Engineering, National Huwei Institute of Technolgoy, Huwei, Taiwan 632, R.O.C. C. D. Chiang and Y.-T. Cherng are with the Chung Shan Institute of Science and Technology, Lung-Tan, Taiwan 325, R.O.C. Publisher Item Identifier S 0018-9197(00)03531-4.

PY - 2000/5

Y1 - 2000/5

N2 - The aim of this paper is to propose an easy and reproducible vapor-phase photo surface treatment method to improve the device performance of the Hg0.8 Cd0.2Te photoconductive detector. We explore the effect of surface passivation on the electrical and optical properties of the HgCdTe photoconductor. Experimental results, including surface mobility, surface carrier concentration, metal-insulator-semicotiductor leakage current, 1/f noise voltage spectrum, the 1/f knee frequency, responsivity Rλ, and specific detectivity D* for stacked photo surface treatment and ZnS or CdTe passivation layers are presented. These data are all directly related to the quality of the interface between the passivation layer and the HgCdTe substrate. We found that, by inserting a photo native oxide layer, we can shift the 1/f knee frequency, reduce the noise power spectrum, and achieve a lower surface recombination velocity S. A higher D* can also be achieved. It was also found that HgCdTe photoconductors passivated with stacked layers show improved interface properties compared to the photoconductors passivated only with a single ZnS or CdTe layer.

AB - The aim of this paper is to propose an easy and reproducible vapor-phase photo surface treatment method to improve the device performance of the Hg0.8 Cd0.2Te photoconductive detector. We explore the effect of surface passivation on the electrical and optical properties of the HgCdTe photoconductor. Experimental results, including surface mobility, surface carrier concentration, metal-insulator-semicotiductor leakage current, 1/f noise voltage spectrum, the 1/f knee frequency, responsivity Rλ, and specific detectivity D* for stacked photo surface treatment and ZnS or CdTe passivation layers are presented. These data are all directly related to the quality of the interface between the passivation layer and the HgCdTe substrate. We found that, by inserting a photo native oxide layer, we can shift the 1/f knee frequency, reduce the noise power spectrum, and achieve a lower surface recombination velocity S. A higher D* can also be achieved. It was also found that HgCdTe photoconductors passivated with stacked layers show improved interface properties compared to the photoconductors passivated only with a single ZnS or CdTe layer.

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JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 5

ER -

Photo-Enhanced Native Oxidation Process for Hg_0.8Cd_0.2Te Photoconductors

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