Photodetector of ZnO nanowires based on through-silicon via approach

Yi Hao Chen; I. Tzu Huang; Shoou Jinn Chang; Ting Jen Hsueh

doi:10.1109/IITC-AMC.2016.7507704

Photodetector of ZnO nanowires based on through-silicon via approach

Yi Hao Chen, I. Tzu Huang, Shoou Jinn Chang, Ting Jen Hsueh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.

Original language	English
Title of host publication	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	123-124
Number of pages	2
ISBN (Electronic)	9781509003860
DOIs	https://doi.org/10.1109/IITC-AMC.2016.7507704
Publication status	Published - 2016 Jul 8
Event	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States Duration: 2016 May 23 → 2016 May 26

Publication series

Name	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

Other

Other	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Country/Territory	United States
City	San Jose
Period	16-05-23 → 16-05-26

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Metals and Alloys
Surfaces, Coatings and Films

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10.1109/IITC-AMC.2016.7507704

Cite this

Chen, Y. H., Huang, I. T., Chang, S. J., & Hsueh, T. J. (2016). Photodetector of ZnO nanowires based on through-silicon via approach. In 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 (pp. 123-124). Article 7507704 (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC-AMC.2016.7507704

Chen, Yi Hao ; Huang, I. Tzu ; Chang, Shoou Jinn et al. / Photodetector of ZnO nanowires based on through-silicon via approach. 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 123-124 (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016).

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title = "Photodetector of ZnO nanowires based on through-silicon via approach",

abstract = "A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.",

author = "Chen, {Yi Hao} and Huang, {I. Tzu} and Chang, {Shoou Jinn} and Hsueh, {Ting Jen}",

note = "Funding Information: Ministry of Science and Technology, Taiwan (104GE05, 103-2221-E-492-047-MY3); National Nano Devices Laboratories, Tainan, Taiwan, Republic of China, Taiwan. Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 ; Conference date: 23-05-2016 Through 26-05-2016",

year = "2016",

month = jul,

day = "8",

doi = "10.1109/IITC-AMC.2016.7507704",

language = "English",

series = "2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "123--124",

booktitle = "2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016",

address = "United States",

}

Chen, YH, Huang, IT, Chang, SJ & Hsueh, TJ 2016, Photodetector of ZnO nanowires based on through-silicon via approach. in 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016., 7507704, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 123-124, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016, San Jose, United States, 16-05-23. https://doi.org/10.1109/IITC-AMC.2016.7507704

Photodetector of ZnO nanowires based on through-silicon via approach. / Chen, Yi Hao; Huang, I. Tzu; Chang, Shoou Jinn et al.
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 123-124 7507704 (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Photodetector of ZnO nanowires based on through-silicon via approach

AU - Chen, Yi Hao

AU - Huang, I. Tzu

AU - Chang, Shoou Jinn

AU - Hsueh, Ting Jen

N1 - Funding Information: Ministry of Science and Technology, Taiwan (104GE05, 103-2221-E-492-047-MY3); National Nano Devices Laboratories, Tainan, Taiwan, Republic of China, Taiwan. Publisher Copyright: © 2016 IEEE.

PY - 2016/7/8

Y1 - 2016/7/8

N2 - A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.

AB - A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.

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BT - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

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Chen YH, Huang IT, Chang SJ, Hsueh TJ. Photodetector of ZnO nanowires based on through-silicon via approach. In 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 123-124. 7507704. (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016). doi: 10.1109/IITC-AMC.2016.7507704

Photodetector of ZnO nanowires based on through-silicon via approach

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