Photoelectrochemical function in gate-recessed AlGaN/GaN metaloxidesemiconductor high-electron-mobility transistors

Ya Lan Chiou; Li Hsien Huang; Ching Ting Lee

doi:10.1109/LED.2009.2037983

Photoelectrochemical function in gate-recessed AlGaN/GaN metaloxidesemiconductor high-electron-mobility transistors

Ya Lan Chiou, Li Hsien Huang, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

Photoelectrochemical (PEC) wet etching and oxidation methods were used for fabricating gate-recessed AlGaN/GaN metaloxidesemiconductor high-electron- mobility transistors (MOS-HEMTs). The AlGaN layer was recessed by the PEC wet etching method. The PEC oxidation method was then performed to directly grow an oxide film on the recessed surface of the AlGaN layer as gate dielectric film and passivation of the surface. The gate-recessed AlGaN/GaN MOS-HEMTs exhibited a saturation drainsource current of 642 mA/mm at V_GS= 0V, a maximum extrinsic transconductance of 86 mS/mm, and an off-state breakdown voltage of larger than-100 V.

Original language	English
Article number	5378600
Pages (from-to)	183-185
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	3
DOIs	https://doi.org/10.1109/LED.2009.2037983
Publication status	Published - 2010 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2037983

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@article{7c2f86baebd6467790d5ffa17c31cf1a,

title = "Photoelectrochemical function in gate-recessed AlGaN/GaN metaloxidesemiconductor high-electron-mobility transistors",

abstract = "Photoelectrochemical (PEC) wet etching and oxidation methods were used for fabricating gate-recessed AlGaN/GaN metaloxidesemiconductor high-electron- mobility transistors (MOS-HEMTs). The AlGaN layer was recessed by the PEC wet etching method. The PEC oxidation method was then performed to directly grow an oxide film on the recessed surface of the AlGaN layer as gate dielectric film and passivation of the surface. The gate-recessed AlGaN/GaN MOS-HEMTs exhibited a saturation drainsource current of 642 mA/mm at VGS= 0V, a maximum extrinsic transconductance of 86 mS/mm, and an off-state breakdown voltage of larger than-100 V.",

author = "Chiou, {Ya Lan} and Huang, {Li Hsien} and Lee, {Ching Ting}",

note = "Funding Information: Manuscript received October 24, 2009; revised November 17, 2009 and November 24, 2009. First published January 12, 2010; current version published February 24, 2010. This work was supported by the National Science Council of Taiwan under Contract NSC-096-2221-E-006-282-MY3. The review of this letter was arranged by Editor J. A. del Alamo. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",

year = "2010",

month = mar,

doi = "10.1109/LED.2009.2037983",

language = "English",

volume = "31",

pages = "183--185",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Photoelectrochemical function in gate-recessed AlGaN/GaN metaloxidesemiconductor high-electron-mobility transistors

AU - Chiou, Ya Lan

AU - Huang, Li Hsien

AU - Lee, Ching Ting

N1 - Funding Information: Manuscript received October 24, 2009; revised November 17, 2009 and November 24, 2009. First published January 12, 2010; current version published February 24, 2010. This work was supported by the National Science Council of Taiwan under Contract NSC-096-2221-E-006-282-MY3. The review of this letter was arranged by Editor J. A. del Alamo. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2010/3

Y1 - 2010/3

N2 - Photoelectrochemical (PEC) wet etching and oxidation methods were used for fabricating gate-recessed AlGaN/GaN metaloxidesemiconductor high-electron- mobility transistors (MOS-HEMTs). The AlGaN layer was recessed by the PEC wet etching method. The PEC oxidation method was then performed to directly grow an oxide film on the recessed surface of the AlGaN layer as gate dielectric film and passivation of the surface. The gate-recessed AlGaN/GaN MOS-HEMTs exhibited a saturation drainsource current of 642 mA/mm at VGS= 0V, a maximum extrinsic transconductance of 86 mS/mm, and an off-state breakdown voltage of larger than-100 V.

AB - Photoelectrochemical (PEC) wet etching and oxidation methods were used for fabricating gate-recessed AlGaN/GaN metaloxidesemiconductor high-electron- mobility transistors (MOS-HEMTs). The AlGaN layer was recessed by the PEC wet etching method. The PEC oxidation method was then performed to directly grow an oxide film on the recessed surface of the AlGaN layer as gate dielectric film and passivation of the surface. The gate-recessed AlGaN/GaN MOS-HEMTs exhibited a saturation drainsource current of 642 mA/mm at VGS= 0V, a maximum extrinsic transconductance of 86 mS/mm, and an off-state breakdown voltage of larger than-100 V.

UR - http://www.scopus.com/inward/record.url?scp=77649148704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77649148704&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2037983

DO - 10.1109/LED.2009.2037983

M3 - Article

AN - SCOPUS:77649148704

SN - 0741-3106

VL - 31

SP - 183

EP - 185

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 5378600

ER -

Photoelectrochemical function in gate-recessed AlGaN/GaN metaloxidesemiconductor high-electron-mobility transistors

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