Photoelectrochemical (PEC) oxidation method was used to directly oxidize AlGaN layer as the oxide layer of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs). High-k Ta2O 5 layer and wide bandgap Al2O3 layer were sequentially deposited on the PEC-oxidized layer as the gate dielectric stack of the MOS-HEMTs. Comparing with the Al2O3/Ta 2O5/Al2O3 gate dielectric stack, the resulting MOS-HEMTs exhibited improved performances, including a maximum extrinsic transconductance of 134 mS/mm, a Hooge's coefficient of 1.32 × 10-4, and a maximum output power of 3.44 W/mm. These experimental results verified that high performance gate dielectric stack/AlGaN interface was achieved using the PEC oxidation method.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)