Photoelectrochemical oxidation-treated AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with oxidized layer/Ta2O 5/Al2O3 gate dielectric stack

Ching Ting Lee, Ya Lan Chiou

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Photoelectrochemical (PEC) oxidation method was used to directly oxidize AlGaN layer as the oxide layer of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs). High-k Ta2O 5 layer and wide bandgap Al2O3 layer were sequentially deposited on the PEC-oxidized layer as the gate dielectric stack of the MOS-HEMTs. Comparing with the Al2O3/Ta 2O5/Al2O3 gate dielectric stack, the resulting MOS-HEMTs exhibited improved performances, including a maximum extrinsic transconductance of 134 mS/mm, a Hooge's coefficient of 1.32 × 10-4, and a maximum output power of 3.44 W/mm. These experimental results verified that high performance gate dielectric stack/AlGaN interface was achieved using the PEC oxidation method.

Original languageEnglish
Article number082104
JournalApplied Physics Letters
Volume103
Issue number8
DOIs
Publication statusPublished - 2013 Aug 19

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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