Photoelectrochemically recessed AlGaN/GaN monolithic inverter incorporating LiNbO3 ferroelectric film

Ching-Ting Lee, Jhe Hao Chang, Chun Yen Tseng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, the AlGaN/GaN monolithic inverters were integrated by the enhancement-mode metal-oxide-semiconductor high-electron-mobility transistors (E-mode MOSHEMTs) and the depletion-mode metal-oxide-semiconductor high-electron-mobility transistors (D-mode MOSHEMTs). For the fabrication of the E-mode MOSHEMTs, the LiNbO3 (LNO) ferroelectric films deposited on the photoelectrochemically (PEC)-recessed structure effectively compensated the two dimensional electron gas (2DEG) channel existed in the AlGaN/GaN heterostructure. For the fabrication of the D-mode MOSHEMTs, the PEC wet etching method and the surface treatment were utilized to form the various-thick etched AlGaN layers with low surface defects. Therefore, the operating current of the D-mode MOSHEMTs could be controlled. Finally, the resulting monolithic inverters with a suitable current ratio (β) of 25 were successfully fabricated. The corresponded output swing (between VOH-VOL), the noise margin high (NMH: VOH-VIH), and the noise margin low (NML: VIL-VOL) were respectively about 4.9 V, 1.9 V, and 1.7 V, when the input signal was 5 Vp-p. Most importantly, the corresponded output voltage (Vout) was 2.5 V which equaled to the half of VDD according to the voltage transfer characteristics (VTC) of the resulting inverters, when the input voltage (VIN) was 2.5 V. It indicated that the monolithic inverters have an unskewed inverter property.

Original languageEnglish
Title of host publicationProceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015
EditorsJunyan Ren, Ting-Ao Tang, Fan Ye, Huihua Yu
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984831
DOIs
Publication statusPublished - 2016 Jul 21
Event11th IEEE International Conference on Advanced Semiconductor Integrated Circuits (ASIC), ASICON 2015 - Chengdu, China
Duration: 2015 Nov 32015 Nov 6

Publication series

NameProceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015

Other

Other11th IEEE International Conference on Advanced Semiconductor Integrated Circuits (ASIC), ASICON 2015
CountryChina
CityChengdu
Period15-11-0315-11-06

Fingerprint

Ferroelectric films
High electron mobility transistors
Metals
Two dimensional electron gas
Electric potential
Fabrication
Wet etching
Surface defects
Surface treatment
Heterojunctions
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Lee, C-T., Chang, J. H., & Tseng, C. Y. (2016). Photoelectrochemically recessed AlGaN/GaN monolithic inverter incorporating LiNbO3 ferroelectric film. In J. Ren, T-A. Tang, F. Ye, & H. Yu (Eds.), Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015 [7516990] (Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASICON.2015.7516990
Lee, Ching-Ting ; Chang, Jhe Hao ; Tseng, Chun Yen. / Photoelectrochemically recessed AlGaN/GaN monolithic inverter incorporating LiNbO3 ferroelectric film. Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015. editor / Junyan Ren ; Ting-Ao Tang ; Fan Ye ; Huihua Yu. Institute of Electrical and Electronics Engineers Inc., 2016. (Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015).
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abstract = "In this work, the AlGaN/GaN monolithic inverters were integrated by the enhancement-mode metal-oxide-semiconductor high-electron-mobility transistors (E-mode MOSHEMTs) and the depletion-mode metal-oxide-semiconductor high-electron-mobility transistors (D-mode MOSHEMTs). For the fabrication of the E-mode MOSHEMTs, the LiNbO3 (LNO) ferroelectric films deposited on the photoelectrochemically (PEC)-recessed structure effectively compensated the two dimensional electron gas (2DEG) channel existed in the AlGaN/GaN heterostructure. For the fabrication of the D-mode MOSHEMTs, the PEC wet etching method and the surface treatment were utilized to form the various-thick etched AlGaN layers with low surface defects. Therefore, the operating current of the D-mode MOSHEMTs could be controlled. Finally, the resulting monolithic inverters with a suitable current ratio (β) of 25 were successfully fabricated. The corresponded output swing (between VOH-VOL), the noise margin high (NMH: VOH-VIH), and the noise margin low (NML: VIL-VOL) were respectively about 4.9 V, 1.9 V, and 1.7 V, when the input signal was 5 Vp-p. Most importantly, the corresponded output voltage (Vout) was 2.5 V which equaled to the half of VDD according to the voltage transfer characteristics (VTC) of the resulting inverters, when the input voltage (VIN) was 2.5 V. It indicated that the monolithic inverters have an unskewed inverter property.",
author = "Ching-Ting Lee and Chang, {Jhe Hao} and Tseng, {Chun Yen}",
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Lee, C-T, Chang, JH & Tseng, CY 2016, Photoelectrochemically recessed AlGaN/GaN monolithic inverter incorporating LiNbO3 ferroelectric film. in J Ren, T-A Tang, F Ye & H Yu (eds), Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015., 7516990, Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015, Institute of Electrical and Electronics Engineers Inc., 11th IEEE International Conference on Advanced Semiconductor Integrated Circuits (ASIC), ASICON 2015, Chengdu, China, 15-11-03. https://doi.org/10.1109/ASICON.2015.7516990

Photoelectrochemically recessed AlGaN/GaN monolithic inverter incorporating LiNbO3 ferroelectric film. / Lee, Ching-Ting; Chang, Jhe Hao; Tseng, Chun Yen.

Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015. ed. / Junyan Ren; Ting-Ao Tang; Fan Ye; Huihua Yu. Institute of Electrical and Electronics Engineers Inc., 2016. 7516990 (Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Photoelectrochemically recessed AlGaN/GaN monolithic inverter incorporating LiNbO3 ferroelectric film

AU - Lee, Ching-Ting

AU - Chang, Jhe Hao

AU - Tseng, Chun Yen

PY - 2016/7/21

Y1 - 2016/7/21

N2 - In this work, the AlGaN/GaN monolithic inverters were integrated by the enhancement-mode metal-oxide-semiconductor high-electron-mobility transistors (E-mode MOSHEMTs) and the depletion-mode metal-oxide-semiconductor high-electron-mobility transistors (D-mode MOSHEMTs). For the fabrication of the E-mode MOSHEMTs, the LiNbO3 (LNO) ferroelectric films deposited on the photoelectrochemically (PEC)-recessed structure effectively compensated the two dimensional electron gas (2DEG) channel existed in the AlGaN/GaN heterostructure. For the fabrication of the D-mode MOSHEMTs, the PEC wet etching method and the surface treatment were utilized to form the various-thick etched AlGaN layers with low surface defects. Therefore, the operating current of the D-mode MOSHEMTs could be controlled. Finally, the resulting monolithic inverters with a suitable current ratio (β) of 25 were successfully fabricated. The corresponded output swing (between VOH-VOL), the noise margin high (NMH: VOH-VIH), and the noise margin low (NML: VIL-VOL) were respectively about 4.9 V, 1.9 V, and 1.7 V, when the input signal was 5 Vp-p. Most importantly, the corresponded output voltage (Vout) was 2.5 V which equaled to the half of VDD according to the voltage transfer characteristics (VTC) of the resulting inverters, when the input voltage (VIN) was 2.5 V. It indicated that the monolithic inverters have an unskewed inverter property.

AB - In this work, the AlGaN/GaN monolithic inverters were integrated by the enhancement-mode metal-oxide-semiconductor high-electron-mobility transistors (E-mode MOSHEMTs) and the depletion-mode metal-oxide-semiconductor high-electron-mobility transistors (D-mode MOSHEMTs). For the fabrication of the E-mode MOSHEMTs, the LiNbO3 (LNO) ferroelectric films deposited on the photoelectrochemically (PEC)-recessed structure effectively compensated the two dimensional electron gas (2DEG) channel existed in the AlGaN/GaN heterostructure. For the fabrication of the D-mode MOSHEMTs, the PEC wet etching method and the surface treatment were utilized to form the various-thick etched AlGaN layers with low surface defects. Therefore, the operating current of the D-mode MOSHEMTs could be controlled. Finally, the resulting monolithic inverters with a suitable current ratio (β) of 25 were successfully fabricated. The corresponded output swing (between VOH-VOL), the noise margin high (NMH: VOH-VIH), and the noise margin low (NML: VIL-VOL) were respectively about 4.9 V, 1.9 V, and 1.7 V, when the input signal was 5 Vp-p. Most importantly, the corresponded output voltage (Vout) was 2.5 V which equaled to the half of VDD according to the voltage transfer characteristics (VTC) of the resulting inverters, when the input voltage (VIN) was 2.5 V. It indicated that the monolithic inverters have an unskewed inverter property.

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M3 - Conference contribution

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T3 - Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015

BT - Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015

A2 - Ren, Junyan

A2 - Tang, Ting-Ao

A2 - Ye, Fan

A2 - Yu, Huihua

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Lee C-T, Chang JH, Tseng CY. Photoelectrochemically recessed AlGaN/GaN monolithic inverter incorporating LiNbO3 ferroelectric film. In Ren J, Tang T-A, Ye F, Yu H, editors, Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015. Institute of Electrical and Electronics Engineers Inc. 2016. 7516990. (Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015). https://doi.org/10.1109/ASICON.2015.7516990