Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures

C. F. Shih; N. C. Chen; C. Y. Tseng

doi:10.1016/j.tsf.2008.01.016

Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures

C. F. Shih, N. C. Chen, C. Y. Tseng

Department of Electrical Engineering

Research output: Contribution to journal › Letter › peer-review

14 Citations (Scopus)

Abstract

The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray photoemission spectroscopy (XPS). The surface work function and the difference between the Fermi level and the conduction band minimum of InN were determined by ultraviolet photoemissive yield measurement. The band offsets and surface band bending were determined using XPS. Both spectra proposed downward band bending of the InN surface. Moreover, the Schottky barrier height (SBH) of the InN/GaN interface is determined (1.5 eV). Comparison of the measured SBH with our previous results by electrical measurement is discussed. The physical quantities derived in this work provide important information for use in future studies of InN and InN/GaN heterostructures.

Original language	English
Pages (from-to)	5016-5019
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	15
DOIs	https://doi.org/10.1016/j.tsf.2008.01.016
Publication status	Published - 2008 Jun 2

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2008.01.016

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title = "Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures",

abstract = "The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray photoemission spectroscopy (XPS). The surface work function and the difference between the Fermi level and the conduction band minimum of InN were determined by ultraviolet photoemissive yield measurement. The band offsets and surface band bending were determined using XPS. Both spectra proposed downward band bending of the InN surface. Moreover, the Schottky barrier height (SBH) of the InN/GaN interface is determined (1.5 eV). Comparison of the measured SBH with our previous results by electrical measurement is discussed. The physical quantities derived in this work provide important information for use in future studies of InN and InN/GaN heterostructures.",

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T1 - Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures

AU - Shih, C. F.

AU - Chen, N. C.

AU - Tseng, C. Y.

PY - 2008/6/2

Y1 - 2008/6/2

N2 - The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray photoemission spectroscopy (XPS). The surface work function and the difference between the Fermi level and the conduction band minimum of InN were determined by ultraviolet photoemissive yield measurement. The band offsets and surface band bending were determined using XPS. Both spectra proposed downward band bending of the InN surface. Moreover, the Schottky barrier height (SBH) of the InN/GaN interface is determined (1.5 eV). Comparison of the measured SBH with our previous results by electrical measurement is discussed. The physical quantities derived in this work provide important information for use in future studies of InN and InN/GaN heterostructures.

AB - The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray photoemission spectroscopy (XPS). The surface work function and the difference between the Fermi level and the conduction band minimum of InN were determined by ultraviolet photoemissive yield measurement. The band offsets and surface band bending were determined using XPS. Both spectra proposed downward band bending of the InN surface. Moreover, the Schottky barrier height (SBH) of the InN/GaN interface is determined (1.5 eV). Comparison of the measured SBH with our previous results by electrical measurement is discussed. The physical quantities derived in this work provide important information for use in future studies of InN and InN/GaN heterostructures.

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U2 - 10.1016/j.tsf.2008.01.016

DO - 10.1016/j.tsf.2008.01.016

M3 - Letter

AN - SCOPUS:42649093163

SN - 0040-6090

VL - 516

SP - 5016

EP - 5019

JO - Thin Solid Films

JF - Thin Solid Films

IS - 15

ER -

Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures

Abstract

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