Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures

C. F. Shih, N. C. Chen, C. Y. Tseng

Research output: Contribution to journalLetterpeer-review

13 Citations (Scopus)

Abstract

The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray photoemission spectroscopy (XPS). The surface work function and the difference between the Fermi level and the conduction band minimum of InN were determined by ultraviolet photoemissive yield measurement. The band offsets and surface band bending were determined using XPS. Both spectra proposed downward band bending of the InN surface. Moreover, the Schottky barrier height (SBH) of the InN/GaN interface is determined (1.5 eV). Comparison of the measured SBH with our previous results by electrical measurement is discussed. The physical quantities derived in this work provide important information for use in future studies of InN and InN/GaN heterostructures.

Original languageEnglish
Pages (from-to)5016-5019
Number of pages4
JournalThin Solid Films
Volume516
Issue number15
DOIs
Publication statusPublished - 2008 Jun 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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