Photoemission study of porous silicon

A. Roy, Ashish Atma Chainani, D. D. Sarma, A. K. Sood

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We report x-ray photoelectron spectra from a porous silicon film (PSF) with a photoluminescence peak at 1.8 eV, as a function of argon ion etching time to probe the composition in the surface and the subsurface regions. The results clearly indicate that the surface layer is essentially a fluorine admixed SiO2 phase, while the Si:O:F composition of the subsurface region 2:1:0.2. With the possibility of the existence of hydrogen in this composition it appears that beyond the highly oxidized surface, PSF is a fluorine substituted siloxene derivative, which can be responsible for the visible photoluminescence.

Original languageEnglish
Pages (from-to)1655-1657
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number14
DOIs
Publication statusPublished - 1992 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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