Photoluminescence and Raman scattering in Mg and P co-implanted GaN epitaxial layers

K. T. Liu, Y. K. Su, S. J. Chang, K. Onomitsu, Y. Horikoshi

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2 Citations (Scopus)

Abstract

Optical properties of P-Mg co-implanted GaN epitaxial layers with P/Mg concentration ratios of 0-0.5 have been studied. It is found that the photoluminescence intensity significantly increases with the P/Mg ratio, probably due to the suppression of N vacancy generation by co-implanted P atoms. New photoluminescence lines caused by P-related transitions are observed for samples with a large P/Mg ratio. Unlike the usual donor-acceptor pair emission peaks, these newly observed peaks exhibit clear red shifts when the temperature is increased. The P-related emission is found to be associated with the recombination of electrons on the shallow native donors with holes on isoelectronic P traps. The photoluminescence study suggests that the isoelectronic P trap forms a stable charged state in the P-Mg co-implanted GaN with a hole binding energy of approximately 220 meV. In addition, Raman measurements indicate that the P-Mg co-implanted GaN layers are to be annealed at 1200 °C for 10s to achieve a sufficient recovery of crystal quality.

Original languageEnglish
Pages (from-to)2693-2697
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume241
Issue number12
DOIs
Publication statusPublished - 2004 Oct 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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