Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition

S. Yang, C. C. Kuo, W. R. Liu, B. H. Lin, H. C. Hsu, C. H. Hsu, W. F. Hsieh

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18 Citations (Scopus)

Abstract

Basal plane stacking faults (BSFs) with density of ∼1 10 6cm -1 are identified as the dominant defect in the annealed ZnO thin films grown on c-plane sapphire by atomic layer deposition. The dominant peak centered at 3.321 eV in low-temperature photoluminescence measurements is attributed to the emission from the BSFs. The emission mechanism is considered to be the confined indirect excitons in the region of quantum-well-like structure formed by the BSFs. The observed energy shift of 19 meV with respect to the BSF-bounded exciton at low temperature may be caused by the localization effect associated with the coupling between BSF quantum wells.

Original languageEnglish
Article number101907
JournalApplied Physics Letters
Volume100
Issue number10
DOIs
Publication statusPublished - 2012 Mar 5

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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