Photoluminescence behavior of Ti-doped Zn2SiO4 thin film phosphors

C. M. Lin, Yi Sheng Lai, J. S. Chen

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

This work investigates the luminescent properties and structure of Zn 2SiO4:Ti thin-film phosphor, before and after annealing up to 1000°C. The Zn2SiO4:Ti films are fabricated by RF sputtering using ceramic target. After annealing at 800°C the β-Zn 2SiO4 phase is formed, but this phase is not suitable for the application in electroluminescence. The willemite structure (α-Zn 2SiO4) is formed after annealing at 900°C or higher temperature. Concurrently, the Zn-O-Si bonding is observed by XPS analysis and it corresponds to the willemite structure. A broad PL peak locates at 386 nm is observed for the 700°C annealed Zn2SiO4:Ti film. However, three PL peaks, centered at 380 nm, 398 nm and 402 nm, can be observed in the 900°C annealed sample. All films exhibit a high transmission (>80%) in the visible spectrum, either before or after annealing. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalECS Transactions
Volume1
Issue number34
DOIs
Publication statusPublished - 2006
EventPhysics and Chemistry of Luminescent Materials XIV - 208th Electrochemical Society Meeting - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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