Photoluminescence behavior of Ti-doped Zn2SiO4 thin film phosphors

C. M. Lin; Yi Sheng Lai; J. S. Chen

doi:10.1149/1.2209391

Photoluminescence behavior of Ti-doped Zn₂SiO₄ thin film phosphors

C. M. Lin, Yi Sheng Lai, J. S. Chen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

This work investigates the luminescent properties and structure of Zn ₂SiO₄:Ti thin-film phosphor, before and after annealing up to 1000°C. The Zn₂SiO₄:Ti films are fabricated by RF sputtering using ceramic target. After annealing at 800°C the β-Zn ₂SiO₄ phase is formed, but this phase is not suitable for the application in electroluminescence. The willemite structure (α-Zn ₂SiO₄) is formed after annealing at 900°C or higher temperature. Concurrently, the Zn-O-Si bonding is observed by XPS analysis and it corresponds to the willemite structure. A broad PL peak locates at 386 nm is observed for the 700°C annealed Zn₂SiO₄:Ti film. However, three PL peaks, centered at 380 nm, 398 nm and 402 nm, can be observed in the 900°C annealed sample. All films exhibit a high transmission (>80%) in the visible spectrum, either before or after annealing. copyright The Electrochemical Society.

Original language	English
Title of host publication	Physics and Chemistry of Luminescent Materials XIV
Publisher	Electrochemical Society Inc.
Pages	1-6
Number of pages	6
Edition	34
ISBN (Electronic)	9781566774895
DOIs	https://doi.org/10.1149/1.2209391
Publication status	Published - 2006
Event	Physics and Chemistry of Luminescent Materials XIV - 208th Electrochemical Society Meeting - Los Angeles, CA, United States Duration: 2005 Oct 16 → 2005 Oct 21

Publication series

Name	ECS Transactions
Number	34
Volume	1
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Physics and Chemistry of Luminescent Materials XIV - 208th Electrochemical Society Meeting
Country/Territory	United States
City	Los Angeles, CA
Period	05-10-16 → 05-10-21

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/1.2209391

Cite this

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title = "Photoluminescence behavior of Ti-doped Zn2SiO4 thin film phosphors",

abstract = "This work investigates the luminescent properties and structure of Zn 2SiO4:Ti thin-film phosphor, before and after annealing up to 1000°C. The Zn2SiO4:Ti films are fabricated by RF sputtering using ceramic target. After annealing at 800°C the β-Zn 2SiO4 phase is formed, but this phase is not suitable for the application in electroluminescence. The willemite structure (α-Zn 2SiO4) is formed after annealing at 900°C or higher temperature. Concurrently, the Zn-O-Si bonding is observed by XPS analysis and it corresponds to the willemite structure. A broad PL peak locates at 386 nm is observed for the 700°C annealed Zn2SiO4:Ti film. However, three PL peaks, centered at 380 nm, 398 nm and 402 nm, can be observed in the 900°C annealed sample. All films exhibit a high transmission (>80%) in the visible spectrum, either before or after annealing. copyright The Electrochemical Society.",

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publisher = "Electrochemical Society Inc.",

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pages = "1--6",

booktitle = "Physics and Chemistry of Luminescent Materials XIV",

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note = "Physics and Chemistry of Luminescent Materials XIV - 208th Electrochemical Society Meeting ; Conference date: 16-10-2005 Through 21-10-2005",

}

Lin, CM, Lai, YS & Chen, JS 2006, Photoluminescence behavior of Ti-doped Zn₂SiO₄ thin film phosphors. in Physics and Chemistry of Luminescent Materials XIV. 34 edn, ECS Transactions, no. 34, vol. 1, Electrochemical Society Inc., pp. 1-6, Physics and Chemistry of Luminescent Materials XIV - 208th Electrochemical Society Meeting, Los Angeles, CA, United States, 05-10-16. https://doi.org/10.1149/1.2209391

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AU - Lin, C. M.

AU - Lai, Yi Sheng

AU - Chen, J. S.

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N2 - This work investigates the luminescent properties and structure of Zn 2SiO4:Ti thin-film phosphor, before and after annealing up to 1000°C. The Zn2SiO4:Ti films are fabricated by RF sputtering using ceramic target. After annealing at 800°C the β-Zn 2SiO4 phase is formed, but this phase is not suitable for the application in electroluminescence. The willemite structure (α-Zn 2SiO4) is formed after annealing at 900°C or higher temperature. Concurrently, the Zn-O-Si bonding is observed by XPS analysis and it corresponds to the willemite structure. A broad PL peak locates at 386 nm is observed for the 700°C annealed Zn2SiO4:Ti film. However, three PL peaks, centered at 380 nm, 398 nm and 402 nm, can be observed in the 900°C annealed sample. All films exhibit a high transmission (>80%) in the visible spectrum, either before or after annealing. copyright The Electrochemical Society.

AB - This work investigates the luminescent properties and structure of Zn 2SiO4:Ti thin-film phosphor, before and after annealing up to 1000°C. The Zn2SiO4:Ti films are fabricated by RF sputtering using ceramic target. After annealing at 800°C the β-Zn 2SiO4 phase is formed, but this phase is not suitable for the application in electroluminescence. The willemite structure (α-Zn 2SiO4) is formed after annealing at 900°C or higher temperature. Concurrently, the Zn-O-Si bonding is observed by XPS analysis and it corresponds to the willemite structure. A broad PL peak locates at 386 nm is observed for the 700°C annealed Zn2SiO4:Ti film. However, three PL peaks, centered at 380 nm, 398 nm and 402 nm, can be observed in the 900°C annealed sample. All films exhibit a high transmission (>80%) in the visible spectrum, either before or after annealing. copyright The Electrochemical Society.

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