Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5 As Quantum Dots on Vicinal GaAs Substrates

Nien Tze Yeh; Tzer En Nee; Po Wen Shiao; Mao Nan Chang; Jen Inn Chyi; Ching Ting Lee

doi:10.1143/JJAP.38.550

Photoluminescence Characteristics of Self-Assembled In_0.5Ga_0.5 As Quantum Dots on Vicinal GaAs Substrates

Nien Tze Yeh, Tzer En Nee, Po Wen Shiao, Mao Nan Chang, Jen Inn Chyi, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

The properties of self-assembled In_0.5Ga_0.5As quantum dots on vicinal GaAs substrates are investigated by atomic force microscopy and temperature-dependent photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the orientation of substrates. PL spectra indicate that the In_0.5Ga_0.5As quantum dots on 4°-off substrate exhibit higher intensity compared to those on 15°-off and exact (100) substrates. The activation energy derived from the temperature-dependent PL of the In_0.5Ga_0.5As quantum dots on 4°-off substrate is higher than that of the dots on 15°-off substrate. The quantum dots on exact (100) substrate exhibit the lowest activation energy because a thick wetting layer is formed.

Original language	English
Pages (from-to)	550-553
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	38
Issue number	1 B
DOIs	https://doi.org/10.1143/JJAP.38.550
Publication status	Published - 1999
Event	Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan Duration: 1998 May 31 → 1998 Jun 4

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5 As Quantum Dots on Vicinal GaAs Substrates",

abstract = "The properties of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates are investigated by atomic force microscopy and temperature-dependent photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the orientation of substrates. PL spectra indicate that the In0.5Ga0.5As quantum dots on 4°-off substrate exhibit higher intensity compared to those on 15°-off and exact (100) substrates. The activation energy derived from the temperature-dependent PL of the In0.5Ga0.5As quantum dots on 4°-off substrate is higher than that of the dots on 15°-off substrate. The quantum dots on exact (100) substrate exhibit the lowest activation energy because a thick wetting layer is formed.",

author = "Yeh, {Nien Tze} and Nee, {Tzer En} and Shiao, {Po Wen} and Chang, {Mao Nan} and Chyi, {Jen Inn} and Lee, {Ching Ting}",

year = "1999",

doi = "10.1143/JJAP.38.550",

language = "English",

volume = "38",

pages = "550--553",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "1 B",

note = "Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 ; Conference date: 31-05-1998 Through 04-06-1998",

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T1 - Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5 As Quantum Dots on Vicinal GaAs Substrates

AU - Yeh, Nien Tze

AU - Nee, Tzer En

AU - Shiao, Po Wen

AU - Chang, Mao Nan

AU - Chyi, Jen Inn

AU - Lee, Ching Ting

PY - 1999

Y1 - 1999

N2 - The properties of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates are investigated by atomic force microscopy and temperature-dependent photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the orientation of substrates. PL spectra indicate that the In0.5Ga0.5As quantum dots on 4°-off substrate exhibit higher intensity compared to those on 15°-off and exact (100) substrates. The activation energy derived from the temperature-dependent PL of the In0.5Ga0.5As quantum dots on 4°-off substrate is higher than that of the dots on 15°-off substrate. The quantum dots on exact (100) substrate exhibit the lowest activation energy because a thick wetting layer is formed.

AB - The properties of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates are investigated by atomic force microscopy and temperature-dependent photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the orientation of substrates. PL spectra indicate that the In0.5Ga0.5As quantum dots on 4°-off substrate exhibit higher intensity compared to those on 15°-off and exact (100) substrates. The activation energy derived from the temperature-dependent PL of the In0.5Ga0.5As quantum dots on 4°-off substrate is higher than that of the dots on 15°-off substrate. The quantum dots on exact (100) substrate exhibit the lowest activation energy because a thick wetting layer is formed.

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DO - 10.1143/JJAP.38.550

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VL - 38

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EP - 553

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1 B

T2 - Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98

Y2 - 31 May 1998 through 4 June 1998

ER -

Photoluminescence Characteristics of Self-Assembled In_0.5Ga_0.5 As Quantum Dots on Vicinal GaAs Substrates

Abstract

All Science Journal Classification (ASJC) codes

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