Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods

T. H. Hsueh, H. W. Huang, F. I. Lai, J. K. Sheu, Y. H. Chang, H. C. Kuo, S. C. Wang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The fabrication of In0.3Ga0.7N/GaN multiple-quantum-well nanorods with diameters of 60-100 nm and their optical characteristics performed by micro-photoluminescence measurements are presented. The nanorods were fabricated by inductively coupled plasma dry etching from a light-emitting diode wafer. The structure and surface properties of fabricated nanorods were verified by the field emission scanning electron microscopy and the transmission electron microscopy. The photoluminescence (PL) spectra with sharp linewidths of typically 1.5 nm were observed at 4 K. The excitation-power-dependent spectra show that no energy shift was observed for these sharp peaks. Moreover, increasing the excitation power instead leads to an occurrence of new, sharp PL peaks at the higher energy tail of the PL spectra, which suggest that excitons are strongly confined in quantum-dot-like regions or localization centres.

Original languageEnglish
Pages (from-to)448-450
Number of pages3
Issue number4
Publication statusPublished - 2005 Apr

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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