Photoluminescence from Si0.7Ge0.3/Si quantum dots with a wavelength in the visible range is reported. The SiGe/Si quantum dots were fabricated by electron beam lithography and reactive ion etching of an SiGe/Si superlattice. A photoluminescence spectrum was obtained between 4.2 K and room temperature. As the temperature increased, the photoluminescence intensity decreased, with the peak position shifting slightly to a higher energy. The photoluminescence persisted up to room temperature with its intensity ∼40% of that at 4.2 K.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering