Photoluminescence from SiGe/Si quantum dots with wavelength in the visible range

F. Y. Huang, Y. S. Tang, J. N. Duan, K. L. Wang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Photoluminescence from Si0.7Ge0.3/Si quantum dots with a wavelength in the visible range is reported. The SiGe/Si quantum dots were fabricated by electron beam lithography and reactive ion etching of an SiGe/Si superlattice. A photoluminescence spectrum was obtained between 4.2 K and room temperature. As the temperature increased, the photoluminescence intensity decreased, with the peak position shifting slightly to a higher energy. The photoluminescence persisted up to room temperature with its intensity ∼40% of that at 4.2 K.

Original languageEnglish
Pages (from-to)1736-1737
Number of pages2
JournalElectronics Letters
Volume33
Issue number20
DOIs
Publication statusPublished - 1997 Sep 25

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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