Abstract
Photoluminescence from Si0.7Ge0.3/Si quantum dots with a wavelength in the visible range is reported. The SiGe/Si quantum dots were fabricated by electron beam lithography and reactive ion etching of an SiGe/Si superlattice. A photoluminescence spectrum was obtained between 4.2 K and room temperature. As the temperature increased, the photoluminescence intensity decreased, with the peak position shifting slightly to a higher energy. The photoluminescence persisted up to room temperature with its intensity ∼40% of that at 4.2 K.
| Original language | English |
|---|---|
| Pages (from-to) | 1736-1737 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 33 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 1997 Sept 25 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering