Photoluminescence of β-FeSi2 thin film prepared by ion beam sputter deposition method

K. Shimura, K. Yamaguchi, H. Yamamoto, M. Sasase, S. Shamoto, K. Hojou

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

In this work, photoluminescence (PL) from β-FeSi2 thin film grown by ion beam sputter deposition (IBSD) method is investigated. For the first time, several small PL peaks are observed in the as-grown IBSD films at around 0.77 and 0.83 eV below 100 K. By thermal annealing at 1153 K for more than 24 h, these films showed a strong peak at around 0.81 eV with increased intensity by more than an order of magnitude at 6 K. These annealed samples showed luminescence up to room temperature, while no PL was observed above 100 K for the as-grown films.

Original languageEnglish
Pages (from-to)673-675
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume242
Issue number1-2
DOIs
Publication statusPublished - 2006 Jan

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

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