Photoluminescence of erbium implanted in SiGe

S. J. Chang, D. K. Nayak, Y. Shiraki

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er-related PL peaks were observed at around 1.5 μm, which correspond to the Er 4I13/2 to 4I15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Si0.87Ge0.13:Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.

Original languageEnglish
Pages (from-to)131-136
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 11

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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