The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er- related photoluminescence (PL) peaks were observed at around 1.5 jum, which correspond to the Er 4Ii3/2 to 4Iis/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Sio.87Geo.i3-Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.
|Number of pages||4|
|Journal||Japanese journal of applied physics|
|Publication status||Published - 1995 Oct|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)