Photoluminescence of erbium implanted in sige

Shoou Jinn Chang, Deepak K. Nayak, Yasuhiro Shiraki

Research output: Contribution to journalArticle

Abstract

The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er- related photoluminescence (PL) peaks were observed at around 1.5 jum, which correspond to the Er 4Ii3/2 to 4Iis/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Sio.87Geo.i3-Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.

Original languageEnglish
Pages (from-to)5633-5636
Number of pages4
JournalJapanese Journal of Applied Physics
Volume34
Issue number10
DOIs
Publication statusPublished - 1995 Oct

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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