Photoluminescence of erbium implanted in sige

Shoou Jinn Chang; Deepak K. Nayak; Yasuhiro Shiraki

doi:10.1143/JJAP.34.5633

Photoluminescence of erbium implanted in sige

Shoou Jinn Chang, Deepak K. Nayak, Yasuhiro Shiraki

Research output: Contribution to journal › Article › peer-review

Abstract

The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er- related photoluminescence (PL) peaks were observed at around 1.5 jum, which correspond to the Er 4Ii3/2 to 4Iis/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Sio.87Geo.i3-Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.

Original language	English
Pages (from-to)	5633-5636
Number of pages	4
Journal	Japanese journal of applied physics
Volume	34
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.34.5633
Publication status	Published - 1995 Oct

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.34.5633

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title = "Photoluminescence of erbium implanted in sige",

abstract = "The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er- related photoluminescence (PL) peaks were observed at around 1.5 jum, which correspond to the Er 4Ii3/2 to 4Iis/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Sio.87Geo.i3-Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.",

author = "Chang, {Shoou Jinn} and Nayak, {Deepak K.} and Yasuhiro Shiraki",

year = "1995",

month = oct,

doi = "10.1143/JJAP.34.5633",

language = "English",

volume = "34",

pages = "5633--5636",

journal = "Japanese Journal of Applied Physics",

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AU - Chang, Shoou Jinn

AU - Nayak, Deepak K.

AU - Shiraki, Yasuhiro

PY - 1995/10

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N2 - The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er- related photoluminescence (PL) peaks were observed at around 1.5 jum, which correspond to the Er 4Ii3/2 to 4Iis/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Sio.87Geo.i3-Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.

AB - The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er- related photoluminescence (PL) peaks were observed at around 1.5 jum, which correspond to the Er 4Ii3/2 to 4Iis/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Sio.87Geo.i3-Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.

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Photoluminescence of erbium implanted in sige

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