Photoluminescence of erbium implanted in SiGe

S. J. Chang; D. K. Nayak; Y. Shiraki

doi:10.1557/proc-422-131

Photoluminescence of erbium implanted in SiGe

S. J. Chang
, D. K. Nayak
, Y. Shiraki

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er-related PL peaks were observed at around 1.5 μm, which correspond to the Er ⁴I_13/2 to ⁴I_15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Si_0.87Ge_0.13:Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.

Original language	English
Pages (from-to)	131-136
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	422
DOIs	https://doi.org/10.1557/proc-422-131
Publication status	Published - 1996
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 1996 Apr 8 → 1996 Apr 11

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{3abc510e819340a398e6662ebae4fc4d,

title = "Photoluminescence of erbium implanted in SiGe",

abstract = "The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er-related PL peaks were observed at around 1.5 μm, which correspond to the Er 4I13/2 to 4I15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Si0.87Ge0.13:Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.",

author = "Chang, \{S. J.\} and Nayak, \{D. K.\} and Y. Shiraki",

year = "1996",

doi = "10.1557/proc-422-131",

language = "English",

volume = "422",

pages = "131--136",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Photoluminescence of erbium implanted in SiGe

AU - Chang, S. J.

AU - Nayak, D. K.

AU - Shiraki, Y.

PY - 1996

Y1 - 1996

N2 - The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er-related PL peaks were observed at around 1.5 μm, which correspond to the Er 4I13/2 to 4I15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Si0.87Ge0.13:Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.

AB - The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er-related PL peaks were observed at around 1.5 μm, which correspond to the Er 4I13/2 to 4I15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Si0.87Ge0.13:Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.

UR - https://www.scopus.com/pages/publications/0030409738

UR - https://www.scopus.com/pages/publications/0030409738#tab=citedBy

U2 - 10.1557/proc-422-131

DO - 10.1557/proc-422-131

M3 - Conference article

AN - SCOPUS:0030409738

SN - 0272-9172

VL - 422

SP - 131

EP - 136

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 11 April 1996

ER -

Photoluminescence of erbium implanted in SiGe

Abstract

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