Temperature and power dependent photoluminescence measurements were carried out on the multi-layer structure of GeSi dots grown on Si(001) substrate by gas-source molecular beam epitaxy. The transfer of photon-induced carriers from wetting layers into the dots and the region near the dots was evidenced. Different power dependent behaviors of the photoluminescence peak position were observed for the dots and the wetting layer. Accordingly, type-II and type-I band alignments were proposed for the dots and the wetting layers, respectively. After annealing, the photoluminescence peaks from the dots and the wetting layers showed blueshift due to the atomic intermixing. For the samples annealed at temperature above 850°C for 5 min, the band alignment of the dots changes from type-II to type-I.
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 2001|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering