Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors

Ching Lien Hsiao, Hsu-Cheng Hsu, Li Chyong Chen, Chien Ting Wu, Chun Wei Chen, Min Chen, Li Wei Tu, Kuei Hsien Chen

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679 eV with a very narrow linewidth of 17 meV at excitation power density of 3.4 W cm2. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by ∼45 meV from 300 to 15 K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3× 1017 cm-3 has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2× 1017 cm-3.

Original languageEnglish
Article number181912
JournalApplied Physics Letters
Volume91
Issue number18
DOIs
Publication statusPublished - 2007 Nov 7

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microcrystals
photoluminescence
defects
spectroscopy
radiant flux density
wurtzite
molecular beam epitaxy
electron microscopes
high resolution
excitation
temperature
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Hsiao, Ching Lien ; Hsu, Hsu-Cheng ; Chen, Li Chyong ; Wu, Chien Ting ; Chen, Chun Wei ; Chen, Min ; Tu, Li Wei ; Chen, Kuei Hsien. / Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors. In: Applied Physics Letters. 2007 ; Vol. 91, No. 18.
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abstract = "Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679 eV with a very narrow linewidth of 17 meV at excitation power density of 3.4 W cm2. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by ∼45 meV from 300 to 15 K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3× 1017 cm-3 has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2× 1017 cm-3.",
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Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors. / Hsiao, Ching Lien; Hsu, Hsu-Cheng; Chen, Li Chyong; Wu, Chien Ting; Chen, Chun Wei; Chen, Min; Tu, Li Wei; Chen, Kuei Hsien.

In: Applied Physics Letters, Vol. 91, No. 18, 181912, 07.11.2007.

Research output: Contribution to journalArticle

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AU - Hsiao, Ching Lien

AU - Hsu, Hsu-Cheng

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AU - Chen, Chun Wei

AU - Chen, Min

AU - Tu, Li Wei

AU - Chen, Kuei Hsien

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