Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors

Ching Lien Hsiao, Hsu Cheng Hsu, Li Chyong Chen, Chien Ting Wu, Chun Wei Chen, Min Chen, Li Wei Tu, Kuei Hsien Chen

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30 Citations (Scopus)

Abstract

Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679 eV with a very narrow linewidth of 17 meV at excitation power density of 3.4 W cm2. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by ∼45 meV from 300 to 15 K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3× 1017 cm-3 has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2× 1017 cm-3.

Original languageEnglish
Article number181912
JournalApplied Physics Letters
Volume91
Issue number18
DOIs
Publication statusPublished - 2007 Nov 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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