Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors

Ching Lien Hsiao; Hsu Cheng Hsu; Li Chyong Chen; Chien Ting Wu; Chun Wei Chen; Min Chen; Li Wei Tu; Kuei Hsien Chen

doi:10.1063/1.2804568

Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors

Ching Lien Hsiao
, Hsu Cheng Hsu
, Li Chyong Chen
, Chien Ting Wu
, Chun Wei Chen
, Min Chen
, Li Wei Tu
, Kuei Hsien Chen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679 eV with a very narrow linewidth of 17 meV at excitation power density of 3.4 W cm2. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by ∼45 meV from 300 to 15 K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3× 1017 cm-3 has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2× 1017 cm-3.

Original language	English
Article number	181912
Journal	Applied Physics Letters
Volume	91
Issue number	18
DOIs	https://doi.org/10.1063/1.2804568
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2804568

Cite this

@article{a261db06cd484f0ca98d298617ec6005,

title = "Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors",

abstract = "Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679 eV with a very narrow linewidth of 17 meV at excitation power density of 3.4 W cm2. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by ∼45 meV from 300 to 15 K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3× 1017 cm-3 has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2× 1017 cm-3.",

author = "Hsiao, \{Ching Lien\} and Hsu, \{Hsu Cheng\} and Chen, \{Li Chyong\} and Wu, \{Chien Ting\} and Chen, \{Chun Wei\} and Min Chen and Tu, \{Li Wei\} and Chen, \{Kuei Hsien\}",

note = "Funding Information: This work was supported by the National Science Council in Taiwan.",

year = "2007",

doi = "10.1063/1.2804568",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "18",

}

TY - JOUR

T1 - Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors

AU - Hsiao, Ching Lien

AU - Hsu, Hsu Cheng

AU - Chen, Li Chyong

AU - Wu, Chien Ting

AU - Chen, Chun Wei

AU - Chen, Min

AU - Tu, Li Wei

AU - Chen, Kuei Hsien

N1 - Funding Information: This work was supported by the National Science Council in Taiwan.

PY - 2007

Y1 - 2007

N2 - Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679 eV with a very narrow linewidth of 17 meV at excitation power density of 3.4 W cm2. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by ∼45 meV from 300 to 15 K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3× 1017 cm-3 has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2× 1017 cm-3.

AB - Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679 eV with a very narrow linewidth of 17 meV at excitation power density of 3.4 W cm2. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by ∼45 meV from 300 to 15 K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3× 1017 cm-3 has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2× 1017 cm-3.

UR - https://www.scopus.com/pages/publications/35648956127

UR - https://www.scopus.com/pages/publications/35648956127#tab=citedBy

U2 - 10.1063/1.2804568

DO - 10.1063/1.2804568

M3 - Article

AN - SCOPUS:35648956127

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181912

ER -

Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors

Abstract

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