Photoluminescence studies on GaAs/Ge/Si and GaAs/SiGe/Ge/Si heterostructures after annealing and hydrogenation

D. Y. Kim; T. W. Kang; T. W. Kim; K. L. Wang; W. S. Bojen

doi:10.1002/pssa.2211390217

Photoluminescence studies on GaAs/Ge/Si and GaAs/SiGe/Ge/Si heterostructures after annealing and hydrogenation

D. Y. Kim, T. W. Kang, T. W. Kim, K. L. Wang, W. S. Bojen

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

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Abstract

Photoluminescence (PL) studies are performed on GaAs layers on Si substrates with Ge and SiGe/Ge buffers. The Ge acceptor‐related free to bound emission peak at 1.45eV was caused by Ge which outdiffused from the buffers during the growth. The tensile stress induced in the GaAs epitaxial layer increased after rapid thermal annealing, and returned to its residual value after subsequent atomic hydrogenation. The PL intensities of the neutral carbon acceptor‐related emission increased due to the neutralization of carbon ions after hydrogenation. These results indicate that the crystallinity of the GaAs epilayer is improved after annealing and hydrogenation.

Original language	English
Pages (from-to)	443-449
Number of pages	7
Journal	physica status solidi (a)
Volume	139
Issue number	2
DOIs	https://doi.org/10.1002/pssa.2211390217
Publication status	Published - 1993 Oct 16

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Photoluminescence studies on GaAs/Ge/Si and GaAs/SiGe/Ge/Si heterostructures after annealing and hydrogenation",

abstract = "Photoluminescence (PL) studies are performed on GaAs layers on Si substrates with Ge and SiGe/Ge buffers. The Ge acceptor‐related free to bound emission peak at 1.45eV was caused by Ge which outdiffused from the buffers during the growth. The tensile stress induced in the GaAs epitaxial layer increased after rapid thermal annealing, and returned to its residual value after subsequent atomic hydrogenation. The PL intensities of the neutral carbon acceptor‐related emission increased due to the neutralization of carbon ions after hydrogenation. These results indicate that the crystallinity of the GaAs epilayer is improved after annealing and hydrogenation.",

author = "Kim, {D. Y.} and Kang, {T. W.} and Kim, {T. W.} and Wang, {K. L.} and Bojen, {W. S.}",

year = "1993",

month = oct,

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doi = "10.1002/pssa.2211390217",

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T1 - Photoluminescence studies on GaAs/Ge/Si and GaAs/SiGe/Ge/Si heterostructures after annealing and hydrogenation

AU - Kim, D. Y.

AU - Kang, T. W.

AU - Kim, T. W.

AU - Wang, K. L.

AU - Bojen, W. S.

PY - 1993/10/16

Y1 - 1993/10/16

N2 - Photoluminescence (PL) studies are performed on GaAs layers on Si substrates with Ge and SiGe/Ge buffers. The Ge acceptor‐related free to bound emission peak at 1.45eV was caused by Ge which outdiffused from the buffers during the growth. The tensile stress induced in the GaAs epitaxial layer increased after rapid thermal annealing, and returned to its residual value after subsequent atomic hydrogenation. The PL intensities of the neutral carbon acceptor‐related emission increased due to the neutralization of carbon ions after hydrogenation. These results indicate that the crystallinity of the GaAs epilayer is improved after annealing and hydrogenation.

AB - Photoluminescence (PL) studies are performed on GaAs layers on Si substrates with Ge and SiGe/Ge buffers. The Ge acceptor‐related free to bound emission peak at 1.45eV was caused by Ge which outdiffused from the buffers during the growth. The tensile stress induced in the GaAs epitaxial layer increased after rapid thermal annealing, and returned to its residual value after subsequent atomic hydrogenation. The PL intensities of the neutral carbon acceptor‐related emission increased due to the neutralization of carbon ions after hydrogenation. These results indicate that the crystallinity of the GaAs epilayer is improved after annealing and hydrogenation.

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Photoluminescence studies on GaAs/Ge/Si and GaAs/SiGe/Ge/Si heterostructures after annealing and hydrogenation

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