Photon-assisted cryoetching of III-V binary compounds by Cl2 at 193 nm

Jong-Liang Lin, M. B. Freiler, M. Levy, R. M. Osgood, D. Collins, T. C. McGill

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We compare low-temperature, excimer-laser-induced etching of GaAs, GaSb, InAs, and InSb surfaces covered with 1-2 monolayers of condensed Cl2. The etch properties and a relative etch rate of GaAs∼GaSb<InAs<InSb are obtained. In addition, the etch rate of GaSb is characterized as a function of various system parameters, i.e., substrate temperature, chlorine pressure, and laser fluence. Spatially well resolved, anisotropic etching of 0.5 μm features has been achieved.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995 Dec 1

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etching
photons
excimer lasers
chlorine
fluence
lasers
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, Jong-Liang ; Freiler, M. B. ; Levy, M. ; Osgood, R. M. ; Collins, D. ; McGill, T. C. / Photon-assisted cryoetching of III-V binary compounds by Cl2 at 193 nm. In: Applied Physics Letters. 1995 ; Vol. 67.
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Photon-assisted cryoetching of III-V binary compounds by Cl2 at 193 nm. / Lin, Jong-Liang; Freiler, M. B.; Levy, M.; Osgood, R. M.; Collins, D.; McGill, T. C.

In: Applied Physics Letters, Vol. 67, 01.12.1995.

Research output: Contribution to journalArticle

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AU - McGill, T. C.

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