We compare low-temperature, excimer-laser-induced etching of GaAs, GaSb, InAs, and InSb surfaces covered with 1-2 monolayers of condensed Cl2. The etch properties and a relative etch rate of GaAs∼GaSb<InAs<InSb are obtained. In addition, the etch rate of GaSb is characterized as a function of various system parameters, i.e., substrate temperature, chlorine pressure, and laser fluence. Spatially well resolved, anisotropic etching of 0.5 μm features has been achieved.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)