Photon-assisted cryoetching of III-V binary compounds by Cl2 at 193 nm

J. L. Lin; M. B. Freiler; M. Levy; R. M. Osgood; D. Collins; T. C. McGill

doi:10.1063/1.114922

Photon-assisted cryoetching of III-V binary compounds by Cl₂ at 193 nm

J. L. Lin, M. B. Freiler, M. Levy, R. M. Osgood, D. Collins, T. C. McGill

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We compare low-temperature, excimer-laser-induced etching of GaAs, GaSb, InAs, and InSb surfaces covered with 1-2 monolayers of condensed Cl₂. The etch properties and a relative etch rate of GaAs∼GaSb<InAs<InSb are obtained. In addition, the etch rate of GaSb is characterized as a function of various system parameters, i.e., substrate temperature, chlorine pressure, and laser fluence. Spatially well resolved, anisotropic etching of 0.5 μm features has been achieved.

Original language	English
Pages (from-to)	3563
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114922
Publication status	Published - 1995

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.114922

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title = "Photon-assisted cryoetching of III-V binary compounds by Cl2 at 193 nm",

abstract = "We compare low-temperature, excimer-laser-induced etching of GaAs, GaSb, InAs, and InSb surfaces covered with 1-2 monolayers of condensed Cl2. The etch properties and a relative etch rate of GaAs∼GaSb<InAs<InSb are obtained. In addition, the etch rate of GaSb is characterized as a function of various system parameters, i.e., substrate temperature, chlorine pressure, and laser fluence. Spatially well resolved, anisotropic etching of 0.5 μm features has been achieved.",

author = "Lin, {J. L.} and Freiler, {M. B.} and M. Levy and Osgood, {R. M.} and D. Collins and McGill, {T. C.}",

year = "1995",

doi = "10.1063/1.114922",

language = "English",

volume = "67",

pages = "3563",

journal = "Applied Physics Letters",

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T1 - Photon-assisted cryoetching of III-V binary compounds by Cl2 at 193 nm

AU - Lin, J. L.

AU - Freiler, M. B.

AU - Levy, M.

AU - Osgood, R. M.

AU - Collins, D.

AU - McGill, T. C.

PY - 1995

Y1 - 1995

N2 - We compare low-temperature, excimer-laser-induced etching of GaAs, GaSb, InAs, and InSb surfaces covered with 1-2 monolayers of condensed Cl2. The etch properties and a relative etch rate of GaAs∼GaSb<InAs<InSb are obtained. In addition, the etch rate of GaSb is characterized as a function of various system parameters, i.e., substrate temperature, chlorine pressure, and laser fluence. Spatially well resolved, anisotropic etching of 0.5 μm features has been achieved.

AB - We compare low-temperature, excimer-laser-induced etching of GaAs, GaSb, InAs, and InSb surfaces covered with 1-2 monolayers of condensed Cl2. The etch properties and a relative etch rate of GaAs∼GaSb<InAs<InSb are obtained. In addition, the etch rate of GaSb is characterized as a function of various system parameters, i.e., substrate temperature, chlorine pressure, and laser fluence. Spatially well resolved, anisotropic etching of 0.5 μm features has been achieved.

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U2 - 10.1063/1.114922

DO - 10.1063/1.114922

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VL - 67

SP - 3563

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -

Photon-assisted cryoetching of III-V binary compounds by Cl₂ at 193 nm

Abstract

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