Photon-assisted cryoetching of III-V binary compounds by Cl2 at 193 nm

J. L. Lin, M. B. Freiler, M. Levy, R. M. Osgood, D. Collins, T. C. McGill

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We compare low-temperature, excimer-laser-induced etching of GaAs, GaSb, InAs, and InSb surfaces covered with 1-2 monolayers of condensed Cl2. The etch properties and a relative etch rate of GaAs∼GaSb<InAs<InSb are obtained. In addition, the etch rate of GaSb is characterized as a function of various system parameters, i.e., substrate temperature, chlorine pressure, and laser fluence. Spatially well resolved, anisotropic etching of 0.5 μm features has been achieved.

Original languageEnglish
Pages (from-to)3563
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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