Abstract
We compare low-temperature, excimer-laser-induced etching of GaAs, GaSb, InAs, and InSb surfaces covered with 1-2 monolayers of condensed Cl2. The etch properties and a relative etch rate of GaAs∼GaSb<InAs<InSb are obtained. In addition, the etch rate of GaSb is characterized as a function of various system parameters, i.e., substrate temperature, chlorine pressure, and laser fluence. Spatially well resolved, anisotropic etching of 0.5 μm features has been achieved.
Original language | English |
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Pages (from-to) | 3563 |
Number of pages | 1 |
Journal | Applied Physics Letters |
Volume | 67 |
DOIs | |
Publication status | Published - 1995 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)