Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications

Hung Pin D. Yang, Jui Nung Liu, Fang I. Lai, Hao Chung Kuo, Jim Y. Chi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Oxide-confined photonic-crystal (PhC) light-emitting diodes (LEDs) on p-type GaAs substrate in the 830 nm range are reported. The device consists of a bottom distributed Bragg reflector (DBR), quantum wells (QWs), and a top DBR, with a photonic-crystal structure formed within the n-type ohmic contact ring for light extraction. The etching depth of the PhC holes is 17-pair out of the 22-pair top DBR being etched off. The internally reflected spontaneous light emission can be extracted out of PhC holes because of lower reflectance within those areas. High-resolution micrographic imaging studies indicate that the device emits light mainly through the photonic-crystal holes and it is suitable for optical communications.

Original languageEnglish
Pages (from-to)1509-1517
Number of pages9
JournalJournal of Modern Optics
Issue number9
Publication statusPublished - 2008 May

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics


Dive into the research topics of 'Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications'. Together they form a unique fingerprint.

Cite this