Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications

Hung Pin D. Yang; Jui Nung Liu; Fang I. Lai; Hao Chung Kuo; Jim Y. Chi

doi:10.1080/09500340701691608

Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications

Hung Pin D. Yang, Jui Nung Liu, Fang I. Lai, Hao Chung Kuo, Jim Y. Chi

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Oxide-confined photonic-crystal (PhC) light-emitting diodes (LEDs) on p-type GaAs substrate in the 830 nm range are reported. The device consists of a bottom distributed Bragg reflector (DBR), quantum wells (QWs), and a top DBR, with a photonic-crystal structure formed within the n-type ohmic contact ring for light extraction. The etching depth of the PhC holes is 17-pair out of the 22-pair top DBR being etched off. The internally reflected spontaneous light emission can be extracted out of PhC holes because of lower reflectance within those areas. High-resolution micrographic imaging studies indicate that the device emits light mainly through the photonic-crystal holes and it is suitable for optical communications.

Original language	English
Pages (from-to)	1509-1517
Number of pages	9
Journal	Journal of Modern Optics
Volume	55
Issue number	9
DOIs	https://doi.org/10.1080/09500340701691608
Publication status	Published - 2008 May

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1080/09500340701691608

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title = "Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications",

abstract = "Oxide-confined photonic-crystal (PhC) light-emitting diodes (LEDs) on p-type GaAs substrate in the 830 nm range are reported. The device consists of a bottom distributed Bragg reflector (DBR), quantum wells (QWs), and a top DBR, with a photonic-crystal structure formed within the n-type ohmic contact ring for light extraction. The etching depth of the PhC holes is 17-pair out of the 22-pair top DBR being etched off. The internally reflected spontaneous light emission can be extracted out of PhC holes because of lower reflectance within those areas. High-resolution micrographic imaging studies indicate that the device emits light mainly through the photonic-crystal holes and it is suitable for optical communications.",

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T1 - Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications

AU - Yang, Hung Pin D.

AU - Liu, Jui Nung

AU - Lai, Fang I.

AU - Kuo, Hao Chung

AU - Chi, Jim Y.

PY - 2008/5

Y1 - 2008/5

N2 - Oxide-confined photonic-crystal (PhC) light-emitting diodes (LEDs) on p-type GaAs substrate in the 830 nm range are reported. The device consists of a bottom distributed Bragg reflector (DBR), quantum wells (QWs), and a top DBR, with a photonic-crystal structure formed within the n-type ohmic contact ring for light extraction. The etching depth of the PhC holes is 17-pair out of the 22-pair top DBR being etched off. The internally reflected spontaneous light emission can be extracted out of PhC holes because of lower reflectance within those areas. High-resolution micrographic imaging studies indicate that the device emits light mainly through the photonic-crystal holes and it is suitable for optical communications.

AB - Oxide-confined photonic-crystal (PhC) light-emitting diodes (LEDs) on p-type GaAs substrate in the 830 nm range are reported. The device consists of a bottom distributed Bragg reflector (DBR), quantum wells (QWs), and a top DBR, with a photonic-crystal structure formed within the n-type ohmic contact ring for light extraction. The etching depth of the PhC holes is 17-pair out of the 22-pair top DBR being etched off. The internally reflected spontaneous light emission can be extracted out of PhC holes because of lower reflectance within those areas. High-resolution micrographic imaging studies indicate that the device emits light mainly through the photonic-crystal holes and it is suitable for optical communications.

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Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications

Abstract

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