Photonic engineering of InP towards homoepitaxial short-wavelength infrared VCSELs

Many emerging opportunities, such as three-dimensional (3D) sensing, biophotonics, and optical data links, call for vertical cavity surface-emitting lasers (VCSELs) that operate in the short-wavelength infrared (SWIR) range. In this paper, we report the use of InP distributed Bragg reflector (DBR) mirrors to overcome an impasse in wafer-level mass production of SWIR VCSELs. The DBRs were based on homoepitaxial InP structures and selectively converted through electrochemistry into quarter-wavelength stack structures of alternating nanoporous (NP) and nonporous InP layers with a record index contrast (1n ∼ 1.0) and near-unity reflectivity. We demonstrated VCSEL operation at both 1380 and 1550 nm from two separate structures prepared on InP substrates using NP–InP DBRs as the bottom mirror and dielectric DBRs as the top mirror. Room temperature continuous-wave (CW) operation of SWIR VCSELs was successfully achieved at both wavelengths with a threshold current density below 2 kA/cm², greater than milliwatt optical output, and a peak power conversion efficiency of 17%. Our work provides strong evidence that the decades-old challenge, in preparing an InP-compatible, high-performance DBR to support the SWIR-emitting vertical cavity, has been addressed and is poised to enable new applications.