Photonic performance of Si nanocluster grown by laser assistance

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A CO2 laser was used in a conventional plasma-enhanced chemical vapor deposition system to assist the decomposition of SiH4 molecules and also to separate the Si clusters from Si oxide matrix. Varying growth gas ratio caused the observed photoluminescence (PL) light emission to vary from 1.65eV to 1.92eV without post-annealing. A degradation of photoluminescence (PL) intensity by irradiating the sample with helium-cadmium (He-Cd) laser was observed. The dependence of PL degradation on long-term irradiation of He-Cd laser was investigated. Post-annealing in H2 could also help to increase the PL intensity plays by passivating the defect centers in as-deposited samples.

Original languageEnglish
Title of host publicationEmerging Information Technology Conference 2005
Pages188-192
Number of pages5
DOIs
Publication statusPublished - 2005 Dec 1
EventEmerging Information Technology Conference 2005 - Taipei, Taiwan
Duration: 2005 Aug 152005 Aug 16

Publication series

NameEmerging Information Technology Conference 2005
Volume2005

Other

OtherEmerging Information Technology Conference 2005
CountryTaiwan
CityTaipei
Period05-08-1505-08-16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Lee, C. T. (2005). Photonic performance of Si nanocluster grown by laser assistance. In Emerging Information Technology Conference 2005 (pp. 188-192). [1544384] (Emerging Information Technology Conference 2005; Vol. 2005). https://doi.org/10.1109/EITC.2005.1544384