Abstract
Photoreflectance was used to study lattice-matched Ga0.5In0.5P/GaAs heterostructures grown using metalorganic chemical vapor deposition. The built-in electric field in the GaAs region at the Ga0.5In0.5P/GaAs interface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps, Eo and Eo+Δo, of Ga0.5In0.5P were also determined. In addition, we found that as the doping concentration of the Ga0.5In0.5P increased, the broadening parameters of the band gap also increased.
Original language | English |
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Pages (from-to) | L571-L573 |
Journal | Japanese Journal of Applied Physics |
Volume | 31 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1992 May |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)