Photoreflectance Studies of Ga0.5In0.5P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique

Jenn Shyong Hwang, Zhijiang Hang, Shin Long Tyan, Sheng Wei Ding, Jen Hsiung Tung, Chin Yuan Chen, Biing Jye Lee, Jung Tsung Hsu

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9 Citations (Scopus)


Photoreflectance was used to study lattice-matched Ga0.5In0.5P/GaAs heterostructures grown using metalorganic chemical vapor deposition. The built-in electric field in the GaAs region at the Ga0.5In0.5P/GaAs interface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps, Eo and Eoo, of Ga0.5In0.5P were also determined. In addition, we found that as the doping concentration of the Ga0.5In0.5P increased, the broadening parameters of the band gap also increased.

Original languageEnglish
Pages (from-to)L571-L573
JournalJapanese Journal of Applied Physics
Issue number5
Publication statusPublished - 1992 May

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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