Photoreflectance Studies of Ga0.5In0.5P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique

Jenn Shyong Hwang; Zhijiang Hang; Shin Long Tyan; Sheng Wei Ding; Jen Hsiung Tung; Chin Yuan Chen; Biing Jye Lee; Jung Tsung Hsu

doi:10.1143/JJAP.31.L571

Photoreflectance Studies of Ga_0.5In_0.5P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique

Jenn Shyong Hwang, Zhijiang Hang, Shin Long Tyan, Sheng Wei Ding, Jen Hsiung Tung, Chin Yuan Chen, Biing Jye Lee, Jung Tsung Hsu

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Photoreflectance was used to study lattice-matched Ga_0.5In_0.5P/GaAs heterostructures grown using metalorganic chemical vapor deposition. The built-in electric field in the GaAs region at the Ga_0.5In_0.5P/GaAs interface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps, E_o and E_o+Δ_o, of Ga_0.5In_0.5P were also determined. In addition, we found that as the doping concentration of the Ga_0.5In_0.5P increased, the broadening parameters of the band gap also increased.

Original language	English
Pages (from-to)	L571-L573
Journal	Japanese journal of applied physics
Volume	31
Issue number	5
DOIs	https://doi.org/10.1143/JJAP.31.L571
Publication status	Published - 1992 May

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.31.L571

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@article{7fdebb30f5264d87b6ff937cf48cb89f,

title = "Photoreflectance Studies of Ga0.5In0.5P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique",

abstract = "Photoreflectance was used to study lattice-matched Ga0.5In0.5P/GaAs heterostructures grown using metalorganic chemical vapor deposition. The built-in electric field in the GaAs region at the Ga0.5In0.5P/GaAs interface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps, Eo and Eo+Δo, of Ga0.5In0.5P were also determined. In addition, we found that as the doping concentration of the Ga0.5In0.5P increased, the broadening parameters of the band gap also increased.",

author = "Hwang, {Jenn Shyong} and Zhijiang Hang and Tyan, {Shin Long} and Ding, {Sheng Wei} and Tung, {Jen Hsiung} and Chen, {Chin Yuan} and Lee, {Biing Jye} and Hsu, {Jung Tsung}",

year = "1992",

month = may,

doi = "10.1143/JJAP.31.L571",

language = "English",

volume = "31",

pages = "L571--L573",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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}

Photoreflectance Studies of Ga_0.5In_0.5P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique. / Hwang, Jenn Shyong; Hang, Zhijiang; Tyan, Shin Long; Ding, Sheng Wei; Tung, Jen Hsiung; Chen, Chin Yuan; Lee, Biing Jye; Hsu, Jung Tsung.

In: Japanese journal of applied physics, Vol. 31, No. 5, 05.1992, p. L571-L573.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Photoreflectance Studies of Ga0.5In0.5P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique

AU - Hwang, Jenn Shyong

AU - Hang, Zhijiang

AU - Tyan, Shin Long

AU - Ding, Sheng Wei

AU - Tung, Jen Hsiung

AU - Chen, Chin Yuan

AU - Lee, Biing Jye

AU - Hsu, Jung Tsung

PY - 1992/5

Y1 - 1992/5

N2 - Photoreflectance was used to study lattice-matched Ga0.5In0.5P/GaAs heterostructures grown using metalorganic chemical vapor deposition. The built-in electric field in the GaAs region at the Ga0.5In0.5P/GaAs interface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps, Eo and Eo+Δo, of Ga0.5In0.5P were also determined. In addition, we found that as the doping concentration of the Ga0.5In0.5P increased, the broadening parameters of the band gap also increased.

AB - Photoreflectance was used to study lattice-matched Ga0.5In0.5P/GaAs heterostructures grown using metalorganic chemical vapor deposition. The built-in electric field in the GaAs region at the Ga0.5In0.5P/GaAs interface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps, Eo and Eo+Δo, of Ga0.5In0.5P were also determined. In addition, we found that as the doping concentration of the Ga0.5In0.5P increased, the broadening parameters of the band gap also increased.

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DO - 10.1143/JJAP.31.L571

M3 - Article

AN - SCOPUS:0026868322

VL - 31

SP - L571-L573

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 5

ER -

Photoreflectance Studies of Ga_0.5In_0.5P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique

Abstract

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