Photoreflectance studies of surface state density of InAlAs

J. S. Hwang; G. S. Chang; W. C. Hwang; W. J. Chen

doi:10.1063/1.1334926

Photoreflectance studies of surface state density of InAlAs

J. S. Hwang, G. S. Chang, W. C. Hwang, W. J. Chen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The surface barrier height and surface Fermi level of InAlAs were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 μW/cm².

Original language	English
Pages (from-to)	1771-1776
Number of pages	6
Journal	Journal of Applied Physics
Volume	89
Issue number	3
DOIs	https://doi.org/10.1063/1.1334926
Publication status	Published - 2001 Feb 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1334926

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title = "Photoreflectance studies of surface state density of InAlAs",

abstract = "The surface barrier height and surface Fermi level of InAlAs were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 μW/cm2.",

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AU - Chang, G. S.

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AU - Chen, W. J.

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Y1 - 2001/2/1

N2 - The surface barrier height and surface Fermi level of InAlAs were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 μW/cm2.

AB - The surface barrier height and surface Fermi level of InAlAs were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 μW/cm2.

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Photoreflectance studies of surface state density of InAlAs

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