Photoreflectance studies of surface state density of InAlAs

J. S. Hwang; Shih-hui Chang; W. C. Hwang; W. J. Chen

doi:10.1063/1.1334926

Photoreflectance studies of surface state density of InAlAs

J. S. Hwang, Shih-hui Chang, W. C. Hwang, W. J. Chen

Department of Photonics

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

The surface barrier height and surface Fermi level of InAlAs were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 μW/cm².

Original language	English
Pages (from-to)	1771-1776
Number of pages	6
Journal	Journal of Applied Physics
Volume	89
Issue number	3
DOIs	https://doi.org/10.1063/1.1334926
Publication status	Published - 2001 Feb 1

Fingerprint

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

Hwang, J. S., Chang, S., Hwang, W. C., & Chen, W. J. (2001). Photoreflectance studies of surface state density of InAlAs. Journal of Applied Physics, 89(3), 1771-1776. https://doi.org/10.1063/1.1334926

@article{c272d0af038b45c9af405b40e876e95c,

title = "Photoreflectance studies of surface state density of InAlAs",

abstract = "The surface barrier height and surface Fermi level of InAlAs were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 μW/cm2.",

author = "Hwang, {J. S.} and Shih-hui Chang and Hwang, {W. C.} and Chen, {W. J.}",

year = "2001",

month = feb

day = "1",

doi = "10.1063/1.1334926",

language = "English",

volume = "89",

pages = "1771--1776",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Photoreflectance studies of surface state density of InAlAs

AU - Hwang, J. S.

AU - Chang, Shih-hui

AU - Hwang, W. C.

AU - Chen, W. J.

PY - 2001/2/1

Y1 - 2001/2/1

N2 - The surface barrier height and surface Fermi level of InAlAs were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 μW/cm2.

AB - The surface barrier height and surface Fermi level of InAlAs were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 μW/cm2.

UR - http://www.scopus.com/inward/record.url?scp=0041828902&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041828902&partnerID=8YFLogxK

U2 - 10.1063/1.1334926

DO - 10.1063/1.1334926

M3 - Article

AN - SCOPUS:0041828902

VL - 89

SP - 1771

EP - 1776

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -

Access to Document

10.1063/1.1334926