Photoreflectance study of InN films with In and N polarities

Kuang-I Lin, Jung Tse Tsai, I. Cheng Su, Jenn Shyong Hwang, Shangjr Gwo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

InN films with In and N polarities grown by molecular beam epitaxy are studied by photoreflectance (PR). No PR feature is observed at 293 K. At 50 K, for N-polar InN, a broad PR feature with Franz-Keldysh oscillations (FKOs) is observed. The surface electric field (312 kV/cm) and band gap (0.682 eV) are deduced from analyzing FKO extremes. However, some narrow PR features are observed for In-polar InN and three transition energies are obtained, but no FKO is observed. These indicate that the surface electric field (or surface band bending) of In-polar InN is smaller than that of N-polar InN.

Original languageEnglish
Article number112601
JournalApplied Physics Express
Volume4
Issue number11
DOIs
Publication statusPublished - 2011 Nov 1

Fingerprint

polarity
oscillations
Electric fields
electric fields
Molecular beam epitaxy
Energy gap
molecular beam epitaxy
energy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lin, Kuang-I ; Tsai, Jung Tse ; Su, I. Cheng ; Hwang, Jenn Shyong ; Gwo, Shangjr. / Photoreflectance study of InN films with In and N polarities. In: Applied Physics Express. 2011 ; Vol. 4, No. 11.
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Photoreflectance study of InN films with In and N polarities. / Lin, Kuang-I; Tsai, Jung Tse; Su, I. Cheng; Hwang, Jenn Shyong; Gwo, Shangjr.

In: Applied Physics Express, Vol. 4, No. 11, 112601, 01.11.2011.

Research output: Contribution to journalArticle

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AU - Lin, Kuang-I

AU - Tsai, Jung Tse

AU - Su, I. Cheng

AU - Hwang, Jenn Shyong

AU - Gwo, Shangjr

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