Photoreflectance study of InN films with In and N polarities

Kuang I. Lin; Jung Tse Tsai; I. Cheng Su; Jenn Shyong Hwang; Shangjr Gwo

doi:10.1143/APEX.4.112601

Photoreflectance study of InN films with In and N polarities

Kuang I. Lin
, Jung Tse Tsai
, I. Cheng Su
, Jenn Shyong Hwang
, Shangjr Gwo

Education and Research Group

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

InN films with In and N polarities grown by molecular beam epitaxy are studied by photoreflectance (PR). No PR feature is observed at 293 K. At 50 K, for N-polar InN, a broad PR feature with Franz-Keldysh oscillations (FKOs) is observed. The surface electric field (312 kV/cm) and band gap (0.682 eV) are deduced from analyzing FKO extremes. However, some narrow PR features are observed for In-polar InN and three transition energies are obtained, but no FKO is observed. These indicate that the surface electric field (or surface band bending) of In-polar InN is smaller than that of N-polar InN.

Original language	English
Article number	112601
Journal	Applied Physics Express
Volume	4
Issue number	11
DOIs	https://doi.org/10.1143/APEX.4.112601
Publication status	Published - 2011 Nov 1

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1143/APEX.4.112601

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title = "Photoreflectance study of InN films with In and N polarities",

abstract = "InN films with In and N polarities grown by molecular beam epitaxy are studied by photoreflectance (PR). No PR feature is observed at 293 K. At 50 K, for N-polar InN, a broad PR feature with Franz-Keldysh oscillations (FKOs) is observed. The surface electric field (312 kV/cm) and band gap (0.682 eV) are deduced from analyzing FKO extremes. However, some narrow PR features are observed for In-polar InN and three transition energies are obtained, but no FKO is observed. These indicate that the surface electric field (or surface band bending) of In-polar InN is smaller than that of N-polar InN.",

author = "Lin, \{Kuang I.\} and Tsai, \{Jung Tse\} and Su, \{I. Cheng\} and Hwang, \{Jenn Shyong\} and Shangjr Gwo",

year = "2011",

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doi = "10.1143/APEX.4.112601",

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journal = "Applied Physics Express",

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T1 - Photoreflectance study of InN films with In and N polarities

AU - Lin, Kuang I.

AU - Tsai, Jung Tse

AU - Su, I. Cheng

AU - Hwang, Jenn Shyong

AU - Gwo, Shangjr

PY - 2011/11/1

Y1 - 2011/11/1

N2 - InN films with In and N polarities grown by molecular beam epitaxy are studied by photoreflectance (PR). No PR feature is observed at 293 K. At 50 K, for N-polar InN, a broad PR feature with Franz-Keldysh oscillations (FKOs) is observed. The surface electric field (312 kV/cm) and band gap (0.682 eV) are deduced from analyzing FKO extremes. However, some narrow PR features are observed for In-polar InN and three transition energies are obtained, but no FKO is observed. These indicate that the surface electric field (or surface band bending) of In-polar InN is smaller than that of N-polar InN.

AB - InN films with In and N polarities grown by molecular beam epitaxy are studied by photoreflectance (PR). No PR feature is observed at 293 K. At 50 K, for N-polar InN, a broad PR feature with Franz-Keldysh oscillations (FKOs) is observed. The surface electric field (312 kV/cm) and band gap (0.682 eV) are deduced from analyzing FKO extremes. However, some narrow PR features are observed for In-polar InN and three transition energies are obtained, but no FKO is observed. These indicate that the surface electric field (or surface band bending) of In-polar InN is smaller than that of N-polar InN.

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DO - 10.1143/APEX.4.112601

M3 - Article

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SN - 1882-0778

VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

IS - 11

M1 - 112601

ER -

Photoreflectance study of InN films with In and N polarities

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