Photoreflectance study of inp and gaas by metal organic chemical vapor deposition using tertiarybutylphosphine and tertiarybutylarsine sources

Hrong Kuan, Yan Kuin Su, Shoou Jinn Chang, Wen Jeng Tzou

Research output: Contribution to journalArticlepeer-review

Abstract

Two metalorganic sources, tertiarybutylphosphine (TBP) and tertiarybutylarsipe (TBA), have been investigated for their possible use as precursors in the metalorganic chemical vapor deposition (MOCVD) process. The optical properties of epilayers were characterized by photoreflectance (PR) spectra. The V/III ratios were variedat a growth temperature of 600°C and growth pressure of 150 Torr. The broadening parameter Γ of GaAs at 300K PR was 11.35 meV. The room-temperature Γ value of InP PR measurement was about 11.46 meV.

Original languageEnglish
Pages (from-to)1831-1832
Number of pages2
JournalJapanese Journal of Applied Physics
Volume34
Issue number4R
DOIs
Publication statusPublished - 1995 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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