TY - JOUR
T1 - Photoreflectance study of inp and gaas by metal organic chemical vapor deposition using tertiarybutylphosphine and tertiarybutylarsine sources
AU - Kuan, Hrong
AU - Su, Yan Kuin
AU - Chang, Shoou Jinn
AU - Tzou, Wen Jeng
PY - 1995/4
Y1 - 1995/4
N2 - Two metalorganic sources, tertiarybutylphosphine (TBP) and tertiarybutylarsipe (TBA), have been investigated for their possible use as precursors in the metalorganic chemical vapor deposition (MOCVD) process. The optical properties of epilayers were characterized by photoreflectance (PR) spectra. The V/III ratios were variedat a growth temperature of 600°C and growth pressure of 150 Torr. The broadening parameter Γ of GaAs at 300K PR was 11.35 meV. The room-temperature Γ value of InP PR measurement was about 11.46 meV.
AB - Two metalorganic sources, tertiarybutylphosphine (TBP) and tertiarybutylarsipe (TBA), have been investigated for their possible use as precursors in the metalorganic chemical vapor deposition (MOCVD) process. The optical properties of epilayers were characterized by photoreflectance (PR) spectra. The V/III ratios were variedat a growth temperature of 600°C and growth pressure of 150 Torr. The broadening parameter Γ of GaAs at 300K PR was 11.35 meV. The room-temperature Γ value of InP PR measurement was about 11.46 meV.
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U2 - 10.1143/JJAP.34.1831
DO - 10.1143/JJAP.34.1831
M3 - Article
AN - SCOPUS:0029291033
VL - 34
SP - 1831
EP - 1832
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4R
ER -