Photoreflectance study of strained InAlAs/InP structures

Jenn Shyong Hwang, W. Y. Chou, S. L. Tyan, Y. C. Wang, J. H. Tung

Research output: Contribution to journalConference article

Abstract

We have studied the photoreflectance spectra at 300 K from a series of strained In1-xAlxAs/InP (0.42<x<0.57) strained structures grown by molecular beam epitaxy. From the observed Franz-Keldysh Oscillation we evaluate the built-in dc electric field and hence the surface potential under different strain. We found that the surface Fermi level is not pinned at midgap under different strain, which results in contrast to AlGaAs and GaAs. In addition, from the observed dependence of the built-in electric field Fdc and surface potential barrier Vm on the top layer thickness, we conclude that the surface states are distributed over two separate regions within the energy band gap under different strain and the densities of the surface states are as low as (2.71 ± 0.05)× 1011 cm-2 for the distribution near the conduction band and (4.29 ± 0.05)× 1011 cm-2 for the distribution near the valence band. The Fermi level is weakly pinned while the top layer thickness is within the characteristic region of each sample.

Original languageEnglish
Pages (from-to)217-222
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume379
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1995 Apr 171995 Apr 20

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Surface potential
Surface states
Fermi level
Electric fields
Valence bands
Conduction bands
Molecular beam epitaxy
Band structure
electric fields
Energy gap
Fermi surfaces
energy bands
aluminum gallium arsenides
conduction bands
molecular beam epitaxy
valence
oscillations
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{e73b9e6ecfda40b5b26889f07963df05,
title = "Photoreflectance study of strained InAlAs/InP structures",
abstract = "We have studied the photoreflectance spectra at 300 K from a series of strained In1-xAlxAs/InP (0.42dc and surface potential barrier Vm on the top layer thickness, we conclude that the surface states are distributed over two separate regions within the energy band gap under different strain and the densities of the surface states are as low as (2.71 ± 0.05)× 1011 cm-2 for the distribution near the conduction band and (4.29 ± 0.05)× 1011 cm-2 for the distribution near the valence band. The Fermi level is weakly pinned while the top layer thickness is within the characteristic region of each sample.",
author = "Hwang, {Jenn Shyong} and Chou, {W. Y.} and Tyan, {S. L.} and Wang, {Y. C.} and Tung, {J. H.}",
year = "1995",
month = "12",
day = "1",
language = "English",
volume = "379",
pages = "217--222",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Photoreflectance study of strained InAlAs/InP structures. / Hwang, Jenn Shyong; Chou, W. Y.; Tyan, S. L.; Wang, Y. C.; Tung, J. H.

In: Materials Research Society Symposium - Proceedings, Vol. 379, 01.12.1995, p. 217-222.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Photoreflectance study of strained InAlAs/InP structures

AU - Hwang, Jenn Shyong

AU - Chou, W. Y.

AU - Tyan, S. L.

AU - Wang, Y. C.

AU - Tung, J. H.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - We have studied the photoreflectance spectra at 300 K from a series of strained In1-xAlxAs/InP (0.42dc and surface potential barrier Vm on the top layer thickness, we conclude that the surface states are distributed over two separate regions within the energy band gap under different strain and the densities of the surface states are as low as (2.71 ± 0.05)× 1011 cm-2 for the distribution near the conduction band and (4.29 ± 0.05)× 1011 cm-2 for the distribution near the valence band. The Fermi level is weakly pinned while the top layer thickness is within the characteristic region of each sample.

AB - We have studied the photoreflectance spectra at 300 K from a series of strained In1-xAlxAs/InP (0.42dc and surface potential barrier Vm on the top layer thickness, we conclude that the surface states are distributed over two separate regions within the energy band gap under different strain and the densities of the surface states are as low as (2.71 ± 0.05)× 1011 cm-2 for the distribution near the conduction band and (4.29 ± 0.05)× 1011 cm-2 for the distribution near the valence band. The Fermi level is weakly pinned while the top layer thickness is within the characteristic region of each sample.

UR - http://www.scopus.com/inward/record.url?scp=0029515774&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029515774&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029515774

VL - 379

SP - 217

EP - 222

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -