Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

J. S. Hwang; S. L. Tyan; W. Y. Chou; M. L. Lee; David Weyburne; Z. Hang; H. H. Lin; T. L. Lee

doi:10.1063/1.111294

Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

J. S. Hwang, S. L. Tyan, W. Y. Chou, M. L. Lee, David Weyburne, Z. Hang, H. H. Lin, T. L. Lee

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We have studied the band gaps and the surface Fermi level positions of a series of In_1-xAl_xAs surface-intrinsic-n⁺ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.

Original language	English
Pages (from-to)	3314-3316
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	24
DOIs	https://doi.org/10.1063/1.111294
Publication status	Published - 1994 Dec 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.111294

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abstract = "We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.",

author = "Hwang, {J. S.} and Tyan, {S. L.} and Chou, {W. Y.} and Lee, {M. L.} and David Weyburne and Z. Hang and Lin, {H. H.} and Lee, {T. L.}",

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doi = "10.1063/1.111294",

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AU - Hwang, J. S.

AU - Tyan, S. L.

AU - Chou, W. Y.

AU - Lee, M. L.

AU - Weyburne, David

AU - Hang, Z.

AU - Lin, H. H.

AU - Lee, T. L.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.

AB - We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.

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