Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

J. S. Hwang, S. L. Tyan, W. Y. Chou, M. L. Lee, David Weyburne, Z. Hang, H. H. Lin, T. L. Lee

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.

Original languageEnglish
Pages (from-to)3314-3316
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number24
DOIs
Publication statusPublished - 1994 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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