Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

J. S. Hwang; S. L. Tyan; W. Y. Chou; M. L. Lee; David Weyburne; Z. Hang; H. H. Lin; T. L. Lee

doi:10.1063/1.111294

Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

J. S. Hwang
, S. L. Tyan
, W. Y. Chou
, M. L. Lee
, David Weyburne
, Z. Hang
, H. H. Lin
, T. L. Lee

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We have studied the band gaps and the surface Fermi level positions of a series of In_1-xAl_xAs surface-intrinsic-n⁺ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.

Original language	English
Pages (from-to)	3314-3316
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	24
DOIs	https://doi.org/10.1063/1.111294
Publication status	Published - 1994

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.111294

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title = "Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures",

abstract = "We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.",

author = "Hwang, \{J. S.\} and Tyan, \{S. L.\} and Chou, \{W. Y.\} and Lee, \{M. L.\} and David Weyburne and Z. Hang and Lin, \{H. H.\} and Lee, \{T. L.\}",

year = "1994",

doi = "10.1063/1.111294",

language = "English",

volume = "64",

pages = "3314--3316",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Inc.",

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T1 - Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

AU - Hwang, J. S.

AU - Tyan, S. L.

AU - Chou, W. Y.

AU - Lee, M. L.

AU - Weyburne, David

AU - Hang, Z.

AU - Lin, H. H.

AU - Lee, T. L.

PY - 1994

Y1 - 1994

N2 - We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.

AB - We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.

UR - https://www.scopus.com/pages/publications/0028444199

UR - https://www.scopus.com/pages/publications/0028444199#tab=citedBy

U2 - 10.1063/1.111294

DO - 10.1063/1.111294

M3 - Article

AN - SCOPUS:0028444199

SN - 0003-6951

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SP - 3314

EP - 3316

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

Abstract

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