Photoresponses of gallium zinc tin oxide thin-film transistors fabricated by cosputtering method

Ming Hung Hsu; Jhih Chun Syu; Sheng Po Chang; Wei Lun Huang; Shoou Jinn Chang

doi:10.1109/LSENS.2018.2882864

Photoresponses of gallium zinc tin oxide thin-film transistors fabricated by cosputtering method

Ming Hung Hsu, Jhih Chun Syu, Sheng Po Chang, Wei Lun Huang, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this article, gallium zinc tin oxide (GaZTO) thin-film transistor (TFT) was deposited by radio-frequency cosputtering. High transmittance in the visible light region and wide energy bandgap of GaZTO thin film were ascertained by UVVisNIR spectrophotometer. GaZTO TFT exhibited a threshold voltage of 2.98V, mobility of 3.86 cm²Vs, onoff ratio of 1.5 10⁶, and subthreshold swing of 0.392Vdecade. The TFT was employed to detect UV light, and the optoelectrical properties were investigated in detail. The UV-visible rejection ratio of GaZTO TFT under illumination was 9.8 10⁵. The results revealed that GaZTO phototransistor is versatile and able to serve as a UV sensor.

Original language	English
Article number	8543240
Journal	IEEE Sensors Letters
Volume	2
Issue number	4
DOIs	https://doi.org/10.1109/LSENS.2018.2882864
Publication status	Published - 2018 Dec

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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title = "Photoresponses of gallium zinc tin oxide thin-film transistors fabricated by cosputtering method",

abstract = "In this article, gallium zinc tin oxide (GaZTO) thin-film transistor (TFT) was deposited by radio-frequency cosputtering. High transmittance in the visible light region and wide energy bandgap of GaZTO thin film were ascertained by UVVisNIR spectrophotometer. GaZTO TFT exhibited a threshold voltage of 2.98V, mobility of 3.86 cm2Vs, onoff ratio of 1.5 106, and subthreshold swing of 0.392Vdecade. The TFT was employed to detect UV light, and the optoelectrical properties were investigated in detail. The UV-visible rejection ratio of GaZTO TFT under illumination was 9.8 105. The results revealed that GaZTO phototransistor is versatile and able to serve as a UV sensor.",

author = "Hsu, {Ming Hung} and Syu, {Jhih Chun} and Chang, {Sheng Po} and Huang, {Wei Lun} and Chang, {Shoou Jinn}",

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T1 - Photoresponses of gallium zinc tin oxide thin-film transistors fabricated by cosputtering method

AU - Hsu, Ming Hung

AU - Syu, Jhih Chun

AU - Chang, Sheng Po

AU - Huang, Wei Lun

AU - Chang, Shoou Jinn

PY - 2018/12

Y1 - 2018/12

N2 - In this article, gallium zinc tin oxide (GaZTO) thin-film transistor (TFT) was deposited by radio-frequency cosputtering. High transmittance in the visible light region and wide energy bandgap of GaZTO thin film were ascertained by UVVisNIR spectrophotometer. GaZTO TFT exhibited a threshold voltage of 2.98V, mobility of 3.86 cm2Vs, onoff ratio of 1.5 106, and subthreshold swing of 0.392Vdecade. The TFT was employed to detect UV light, and the optoelectrical properties were investigated in detail. The UV-visible rejection ratio of GaZTO TFT under illumination was 9.8 105. The results revealed that GaZTO phototransistor is versatile and able to serve as a UV sensor.

AB - In this article, gallium zinc tin oxide (GaZTO) thin-film transistor (TFT) was deposited by radio-frequency cosputtering. High transmittance in the visible light region and wide energy bandgap of GaZTO thin film were ascertained by UVVisNIR spectrophotometer. GaZTO TFT exhibited a threshold voltage of 2.98V, mobility of 3.86 cm2Vs, onoff ratio of 1.5 106, and subthreshold swing of 0.392Vdecade. The TFT was employed to detect UV light, and the optoelectrical properties were investigated in detail. The UV-visible rejection ratio of GaZTO TFT under illumination was 9.8 105. The results revealed that GaZTO phototransistor is versatile and able to serve as a UV sensor.

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Photoresponses of gallium zinc tin oxide thin-film transistors fabricated by cosputtering method

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