Photoresponses of manganese-doped gallium nitride grown by metalorganic vapor-phase epitaxy

Jinn-Kong Sheu, Feng Wen Huang, Yu Hsuan Liu, P. C. Chen, Yu Hsiang Yeh, Ming Lun Lee, Wei-Chi Lai

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The photoresponses of gallium nitride (GaN) doped with manganese (Mn) grown by metalorganic vapor-phase epitaxy were investigated. The transmission spectroscopy obtained from the Mn-doped GaN exhibited three distinct absorption thresholds at approximately 365, 650, and 830 nm, respectively. The below-band-gap absorption peaks were attributed to the fact that the deep Mn-related states mediate the electronic transition between the valence and conduction bands. A below-band-gap spectral response ranging from 400 nm to 1000 nm was also observed from a typical GaN p-i-n photodetector with Mn-doped absorption layer. The significant below-band-gap spectral responses showed that the Mn-doped GaN-based materials have promising applications in intermediate band solar cells.

Original languageEnglish
Article number071107
JournalApplied Physics Letters
Volume102
Issue number7
DOIs
Publication statusPublished - 2013 Feb 18

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gallium nitrides
vapor phase epitaxy
manganese
spectral sensitivity
photometers
conduction bands
solar cells
valence
thresholds
electronics
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Sheu, Jinn-Kong ; Huang, Feng Wen ; Liu, Yu Hsuan ; Chen, P. C. ; Yeh, Yu Hsiang ; Lee, Ming Lun ; Lai, Wei-Chi. / Photoresponses of manganese-doped gallium nitride grown by metalorganic vapor-phase epitaxy. In: Applied Physics Letters. 2013 ; Vol. 102, No. 7.
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abstract = "The photoresponses of gallium nitride (GaN) doped with manganese (Mn) grown by metalorganic vapor-phase epitaxy were investigated. The transmission spectroscopy obtained from the Mn-doped GaN exhibited three distinct absorption thresholds at approximately 365, 650, and 830 nm, respectively. The below-band-gap absorption peaks were attributed to the fact that the deep Mn-related states mediate the electronic transition between the valence and conduction bands. A below-band-gap spectral response ranging from 400 nm to 1000 nm was also observed from a typical GaN p-i-n photodetector with Mn-doped absorption layer. The significant below-band-gap spectral responses showed that the Mn-doped GaN-based materials have promising applications in intermediate band solar cells.",
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Photoresponses of manganese-doped gallium nitride grown by metalorganic vapor-phase epitaxy. / Sheu, Jinn-Kong; Huang, Feng Wen; Liu, Yu Hsuan; Chen, P. C.; Yeh, Yu Hsiang; Lee, Ming Lun; Lai, Wei-Chi.

In: Applied Physics Letters, Vol. 102, No. 7, 071107, 18.02.2013.

Research output: Contribution to journalArticle

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