Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film

K. S. Chang, M. L. Green, I. Levin, J. R. Hattrick-Simpers, C. Jaye, D. A. Fischer, I. Takeuchi, S. De Gendt

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Abstract

This paper reports comprehensive structural and chemical analyses for the combinatorial Ta-C-N/ HfO2 system, crucial data for understanding the electrical properties of Ta-C-N/ HfO2. Combinatorial Ta-C-N "library" (composition spread) films were deposited by magnetron sputtering. Electron probe wavelength dispersive spectroscopy and x-ray fluorescence-yield near-edge spectroscopy were used to quantitatively determine the composition across these films. Scanning x-ray microdiffractometry determined that a solid solution of Ta (C,N)x forms and extends to compositions (0.3 ≤ Ta ≤0.5 and 0.57 ≤ Ta ≤ 0.67) that were previously unknown. The thermal stability of the Ta-C-N/ HfO2 library was studied using high resolution transmission electron microscopy, which shows Ta-C-N/ HfO2 / SiO2 /Si exhibiting good thermal stability up to 950 °C.

Original languageEnglish
Article number192114
JournalApplied Physics Letters
Volume96
Issue number19
DOIs
Publication statusPublished - 2010 Jun 7

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chang, K. S., Green, M. L., Levin, I., Hattrick-Simpers, J. R., Jaye, C., Fischer, D. A., Takeuchi, I., & De Gendt, S. (2010). Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film. Applied Physics Letters, 96(19), [192114]. https://doi.org/10.1063/1.3428788