This paper reports comprehensive structural and chemical analyses for the combinatorial Ta-C-N/ HfO2 system, crucial data for understanding the electrical properties of Ta-C-N/ HfO2. Combinatorial Ta-C-N "library" (composition spread) films were deposited by magnetron sputtering. Electron probe wavelength dispersive spectroscopy and x-ray fluorescence-yield near-edge spectroscopy were used to quantitatively determine the composition across these films. Scanning x-ray microdiffractometry determined that a solid solution of Ta (C,N)x forms and extends to compositions (0.3 ≤ Ta ≤0.5 and 0.57 ≤ Ta ≤ 0.67) that were previously unknown. The thermal stability of the Ta-C-N/ HfO2 library was studied using high resolution transmission electron microscopy, which shows Ta-C-N/ HfO2 / SiO2 /Si exhibiting good thermal stability up to 950 °C.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)