Physical properties of Al-doped MgZnO/AlGaN p–n heterojunction photodetectors

Kuang Po Hsueh, Hsien Chin Chiu, Jinn-Kong Sheu, Yu Hsiang Yeh

Research output: Contribution to journalArticle

Abstract

We report a p–n heterojunction ultraviolet photodetector (PD) based on an Al-doped Mg x Zn 1−x O (AMZO)/Al 0.08 Ga 0.92 N heterojunction. AMZO films with 5 wt% of Al 2 O 3 were deposited onto p–Al 0.08 Ga 0.92 N by using radio-frequency magnetron sputtering, and they were annealed at 700, 800, and 900 °C in a nitrogen ambient for 60 s. The photoluminescence spectra of the AMZO films were measured at 17 K and show two major peaks. A broad visible band could be attributed to the presence of structural defects. The AMZO film annealed at 800 °C showed a lower emission band in the visible region because of the presence of fewer defects compared with the other AMZO films. The wavelength that corresponds with the peak responsivity of the PD annealed at 800 °C was approximately 200 nm, and the cutoff wavelength was approximately 250 nm. Furthermore, the current–voltage characteristics of the Al 0.08 Ga 0.92 N/AMZO p–n junction PD showed a high leakage current. The PD annealed at 800 °C exhibited a dark current of 1.56 μA at a bias of −3 V.

Original languageEnglish
Article number501
JournalOptical and Quantum Electronics
Volume48
Issue number11
DOIs
Publication statusPublished - 2016 Nov 1

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Photodetectors
photometers
Heterojunctions
heterojunctions
Physical properties
physical properties
Wavelength
Defects
Dark currents
defects
dark current
wavelengths
Leakage currents
Magnetron sputtering
radio frequencies
Photoluminescence
magnetron sputtering
leakage
Nitrogen
cut-off

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Hsueh, Kuang Po ; Chiu, Hsien Chin ; Sheu, Jinn-Kong ; Yeh, Yu Hsiang. / Physical properties of Al-doped MgZnO/AlGaN p–n heterojunction photodetectors. In: Optical and Quantum Electronics. 2016 ; Vol. 48, No. 11.
@article{63c9aca1becc4e09adf54dac0145e08c,
title = "Physical properties of Al-doped MgZnO/AlGaN p–n heterojunction photodetectors",
abstract = "We report a p–n heterojunction ultraviolet photodetector (PD) based on an Al-doped Mg x Zn 1−x O (AMZO)/Al 0.08 Ga 0.92 N heterojunction. AMZO films with 5 wt{\%} of Al 2 O 3 were deposited onto p–Al 0.08 Ga 0.92 N by using radio-frequency magnetron sputtering, and they were annealed at 700, 800, and 900 °C in a nitrogen ambient for 60 s. The photoluminescence spectra of the AMZO films were measured at 17 K and show two major peaks. A broad visible band could be attributed to the presence of structural defects. The AMZO film annealed at 800 °C showed a lower emission band in the visible region because of the presence of fewer defects compared with the other AMZO films. The wavelength that corresponds with the peak responsivity of the PD annealed at 800 °C was approximately 200 nm, and the cutoff wavelength was approximately 250 nm. Furthermore, the current–voltage characteristics of the Al 0.08 Ga 0.92 N/AMZO p–n junction PD showed a high leakage current. The PD annealed at 800 °C exhibited a dark current of 1.56 μA at a bias of −3 V.",
author = "Hsueh, {Kuang Po} and Chiu, {Hsien Chin} and Jinn-Kong Sheu and Yeh, {Yu Hsiang}",
year = "2016",
month = "11",
day = "1",
doi = "10.1007/s11082-016-0773-x",
language = "English",
volume = "48",
journal = "Optical and Quantum Electronics",
issn = "0306-8919",
publisher = "Springer New York",
number = "11",

}

Physical properties of Al-doped MgZnO/AlGaN p–n heterojunction photodetectors. / Hsueh, Kuang Po; Chiu, Hsien Chin; Sheu, Jinn-Kong; Yeh, Yu Hsiang.

In: Optical and Quantum Electronics, Vol. 48, No. 11, 501, 01.11.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Physical properties of Al-doped MgZnO/AlGaN p–n heterojunction photodetectors

AU - Hsueh, Kuang Po

AU - Chiu, Hsien Chin

AU - Sheu, Jinn-Kong

AU - Yeh, Yu Hsiang

PY - 2016/11/1

Y1 - 2016/11/1

N2 - We report a p–n heterojunction ultraviolet photodetector (PD) based on an Al-doped Mg x Zn 1−x O (AMZO)/Al 0.08 Ga 0.92 N heterojunction. AMZO films with 5 wt% of Al 2 O 3 were deposited onto p–Al 0.08 Ga 0.92 N by using radio-frequency magnetron sputtering, and they were annealed at 700, 800, and 900 °C in a nitrogen ambient for 60 s. The photoluminescence spectra of the AMZO films were measured at 17 K and show two major peaks. A broad visible band could be attributed to the presence of structural defects. The AMZO film annealed at 800 °C showed a lower emission band in the visible region because of the presence of fewer defects compared with the other AMZO films. The wavelength that corresponds with the peak responsivity of the PD annealed at 800 °C was approximately 200 nm, and the cutoff wavelength was approximately 250 nm. Furthermore, the current–voltage characteristics of the Al 0.08 Ga 0.92 N/AMZO p–n junction PD showed a high leakage current. The PD annealed at 800 °C exhibited a dark current of 1.56 μA at a bias of −3 V.

AB - We report a p–n heterojunction ultraviolet photodetector (PD) based on an Al-doped Mg x Zn 1−x O (AMZO)/Al 0.08 Ga 0.92 N heterojunction. AMZO films with 5 wt% of Al 2 O 3 were deposited onto p–Al 0.08 Ga 0.92 N by using radio-frequency magnetron sputtering, and they were annealed at 700, 800, and 900 °C in a nitrogen ambient for 60 s. The photoluminescence spectra of the AMZO films were measured at 17 K and show two major peaks. A broad visible band could be attributed to the presence of structural defects. The AMZO film annealed at 800 °C showed a lower emission band in the visible region because of the presence of fewer defects compared with the other AMZO films. The wavelength that corresponds with the peak responsivity of the PD annealed at 800 °C was approximately 200 nm, and the cutoff wavelength was approximately 250 nm. Furthermore, the current–voltage characteristics of the Al 0.08 Ga 0.92 N/AMZO p–n junction PD showed a high leakage current. The PD annealed at 800 °C exhibited a dark current of 1.56 μA at a bias of −3 V.

UR - http://www.scopus.com/inward/record.url?scp=84992409134&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84992409134&partnerID=8YFLogxK

U2 - 10.1007/s11082-016-0773-x

DO - 10.1007/s11082-016-0773-x

M3 - Article

VL - 48

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

SN - 0306-8919

IS - 11

M1 - 501

ER -