Piezoelectric effect on Al0.35-δIn δGa0.65N/GaN heterostructures

Ikai Lo, J. K. Tsai, Li Wei Tu, K. Y. Hsieh, M. H. Tsai, C. S. Liu, J. H. Huang, S. Elhamri, W. C. Mitchel, J. K. Sheu

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Al0.35-δInδGa0.65N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence, and Shubnikov-de Haas (SdH) measurements. In the sample of δ<0.01%, two SdH oscillations beat each other due to the population of the lowest two subbands. The carrier concentrations of these two subbands are 1.398 and 1.248×1013cm-2 and the electric field at the interface is reduced to 2.19×104V/cm, which is one order of magnitude smaller than that of Al0.35Ga0.65N/GaN heterostructure. We suggest that a small fraction of In atoms in the Al 0.35-δInδGa0.65N can be used as a tuning parameter to control the strain and the piezoelectric field at the interface.

Original languageEnglish
Pages (from-to)2684-2686
Number of pages3
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2002 Apr 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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