Piezoelectric effect on Al0.35-δIn δGa0.65N/GaN heterostructures

Ikai Lo; J. K. Tsai; Li Wei Tu; K. Y. Hsieh; M. H. Tsai; C. S. Liu; J. H. Huang; S. Elhamri; W. C. Mitchel; J. K. Sheu

doi:10.1063/1.1469209

Piezoelectric effect on Al_0.35-δIn _δGa_0.65N/GaN heterostructures

Ikai Lo, J. K. Tsai, Li Wei Tu, K. Y. Hsieh, M. H. Tsai, C. S. Liu, J. H. Huang, S. Elhamri, W. C. Mitchel, J. K. Sheu

Department of Photonics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Al_0.35-δIn_δGa_0.65N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence, and Shubnikov-de Haas (SdH) measurements. In the sample of δ<0.01%, two SdH oscillations beat each other due to the population of the lowest two subbands. The carrier concentrations of these two subbands are 1.398 and 1.248×10¹³cm^-2 and the electric field at the interface is reduced to 2.19×10⁴V/cm, which is one order of magnitude smaller than that of Al_0.35Ga_0.65N/GaN heterostructure. We suggest that a small fraction of In atoms in the Al _0.35-δIn_δGa_0.65N can be used as a tuning parameter to control the strain and the piezoelectric field at the interface.

Original language	English
Pages (from-to)	2684-2686
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	15
DOIs	https://doi.org/10.1063/1.1469209
Publication status	Published - 2002 Apr 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1469209

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title = "Piezoelectric effect on Al0.35-δIn δGa0.65N/GaN heterostructures",

abstract = "Al0.35-δInδGa0.65N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence, and Shubnikov-de Haas (SdH) measurements. In the sample of δ<0.01%, two SdH oscillations beat each other due to the population of the lowest two subbands. The carrier concentrations of these two subbands are 1.398 and 1.248×1013cm-2 and the electric field at the interface is reduced to 2.19×104V/cm, which is one order of magnitude smaller than that of Al0.35Ga0.65N/GaN heterostructure. We suggest that a small fraction of In atoms in the Al 0.35-δInδGa0.65N can be used as a tuning parameter to control the strain and the piezoelectric field at the interface.",

author = "Ikai Lo and Tsai, {J. K.} and Tu, {Li Wei} and Hsieh, {K. Y.} and Tsai, {M. H.} and Liu, {C. S.} and Huang, {J. H.} and S. Elhamri and Mitchel, {W. C.} and Sheu, {J. K.}",

year = "2002",

month = apr,

day = "15",

doi = "10.1063/1.1469209",

language = "English",

volume = "80",

pages = "2684--2686",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

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TY - JOUR

T1 - Piezoelectric effect on Al0.35-δIn δGa0.65N/GaN heterostructures

AU - Lo, Ikai

AU - Tsai, J. K.

AU - Tu, Li Wei

AU - Hsieh, K. Y.

AU - Tsai, M. H.

AU - Liu, C. S.

AU - Huang, J. H.

AU - Elhamri, S.

AU - Mitchel, W. C.

AU - Sheu, J. K.

PY - 2002/4/15

Y1 - 2002/4/15

N2 - Al0.35-δInδGa0.65N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence, and Shubnikov-de Haas (SdH) measurements. In the sample of δ<0.01%, two SdH oscillations beat each other due to the population of the lowest two subbands. The carrier concentrations of these two subbands are 1.398 and 1.248×1013cm-2 and the electric field at the interface is reduced to 2.19×104V/cm, which is one order of magnitude smaller than that of Al0.35Ga0.65N/GaN heterostructure. We suggest that a small fraction of In atoms in the Al 0.35-δInδGa0.65N can be used as a tuning parameter to control the strain and the piezoelectric field at the interface.

AB - Al0.35-δInδGa0.65N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence, and Shubnikov-de Haas (SdH) measurements. In the sample of δ<0.01%, two SdH oscillations beat each other due to the population of the lowest two subbands. The carrier concentrations of these two subbands are 1.398 and 1.248×1013cm-2 and the electric field at the interface is reduced to 2.19×104V/cm, which is one order of magnitude smaller than that of Al0.35Ga0.65N/GaN heterostructure. We suggest that a small fraction of In atoms in the Al 0.35-δInδGa0.65N can be used as a tuning parameter to control the strain and the piezoelectric field at the interface.

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U2 - 10.1063/1.1469209

DO - 10.1063/1.1469209

M3 - Article

AN - SCOPUS:79956000363

SN - 0003-6951

VL - 80

SP - 2684

EP - 2686

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Piezoelectric effect on Al_0.35-δIn _δGa_0.65N/GaN heterostructures

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