Piezoelectric ZnO-nanorod-structured pressure sensors using GaN-based field-effect-transistor

Ching Ting Lee, Ying Shuo Chiu

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

To utilize the piezoelectric property of ZnO nanorods, the ZnO nanorod array was grown on the AlGaN/GaN field-effect-transistor as the pressure sensors. The drain-source current of the ZnO nanorod-structured-AlGaN/GaN FET pressure sensors can be effectively modulated by the induced gate voltage caused from the piezoelectric phenomenon of ZnO nanorods under different pressures. The pressure sensors revealed the linearly response current under the pressure from 19.6 mN/mm2 to 490 mN/mm2. The ratio of the response current achieved 2.67% under the pressure of 490 mN/mm2. The induced piezoelectric potential under different pressure was also calculated and obtained in this work.

Original languageEnglish
Article number073502
JournalApplied Physics Letters
Volume106
Issue number7
DOIs
Publication statusPublished - 2015 Feb 16

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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