Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates

Y. K. Su, C. H. Wu, Y. S. Huang, H. P. Hsu, W. C. Chen, S. H. Hsu, S. J. Chang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report a detailed study of piezoreflectance (PzR) and contactless electroreflectance (CER) on Ga0.44In0.56N xP1-x epitaxial layers at room temperature. The polarized PzR spectra show anisotropic character along the [110] and [11̄0] directions. Ordering-induced superlattice-like microstructure shown in high resolution transmission electron microscope (HTEM) images confirms the spontaneous ordering in Ga0.44In0.56NxP 1-x epitaxial layers. The obtained PzR and CER spectra are fitted with the theoretical line shape functional form. The valence-band maximum, crystal field/strain splitting and spin-orbit splitting to conduction band transition energies denoted as Eg, Eg12 and Eg13, respectively, are accurately determined. With nitrogen incorporation, the PzR and CER features red-shifts, indicating band gap reduction. The experimentally observed band gap energy reduction of GaInP incorporation nitrogen is of the same order as for nitrogen in binaries. However, the bowing coefficient b is determined to be -10.5eV, that is considerable smaller than that of the incorporation of nitrogen in InP (b=-16eV) or GaP (b=-14eV).

Original languageEnglish
Pages (from-to)357-362
Number of pages6
JournalJournal of Crystal Growth
Volume264
Issue number1-3
DOIs
Publication statusPublished - 2004 Mar 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates'. Together they form a unique fingerprint.

  • Cite this