Piezoreflectance study of silicon carbon nitride nanorods

C. H. Hsieh; Y. S. Huang; P. F. Kuo; Y. F. Chen; L. C. Chen; J. J. Wu; K. H. Chen; K. K. Tiong

doi:10.1063/1.126249

Piezoreflectance study of silicon carbon nitride nanorods

C. H. Hsieh, Y. S. Huang, P. F. Kuo, Y. F. Chen, L. C. Chen, J. J. Wu, K. H. Chen, K. K. Tiong

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Detailed piezoreflectance (PzR) measurements of quasialigned silicon carbon nitride nanorods in the temperature range between 15 and 400 K were performed. The direct band-to-band transition energies E^d_g at various temperatures were determined accurately through line shape fit of the experimental PzR spectra. The temperature dependence of E^d_g is analyzed by the Varshni equation [Y. P. Varshni, Physica, (Amsterdam) 34, 149 (1967)] and an expression containing the Bose-Einstein occupation factor for phonons proposed by L. Viña, S. Logothetidis, and M. Cardona [Phys. Rev. B 30, 1979 (1984)]. The parameters that describe the temperature dependence of E^d_g are evaluated and discussed.

Original language	English
Pages (from-to)	2044-2046
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	15
DOIs	https://doi.org/10.1063/1.126249
Publication status	Published - 2000 Apr 10

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.126249

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title = "Piezoreflectance study of silicon carbon nitride nanorods",

abstract = "Detailed piezoreflectance (PzR) measurements of quasialigned silicon carbon nitride nanorods in the temperature range between 15 and 400 K were performed. The direct band-to-band transition energies Edg at various temperatures were determined accurately through line shape fit of the experimental PzR spectra. The temperature dependence of Edg is analyzed by the Varshni equation [Y. P. Varshni, Physica, (Amsterdam) 34, 149 (1967)] and an expression containing the Bose-Einstein occupation factor for phonons proposed by L. Vi{\~n}a, S. Logothetidis, and M. Cardona [Phys. Rev. B 30, 1979 (1984)]. The parameters that describe the temperature dependence of Edg are evaluated and discussed.",

author = "Hsieh, {C. H.} and Huang, {Y. S.} and Kuo, {P. F.} and Chen, {Y. F.} and Chen, {L. C.} and Wu, {J. J.} and Chen, {K. H.} and Tiong, {K. K.}",

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T1 - Piezoreflectance study of silicon carbon nitride nanorods

AU - Hsieh, C. H.

AU - Huang, Y. S.

AU - Kuo, P. F.

AU - Chen, Y. F.

AU - Chen, L. C.

AU - Wu, J. J.

AU - Chen, K. H.

AU - Tiong, K. K.

PY - 2000/4/10

Y1 - 2000/4/10

N2 - Detailed piezoreflectance (PzR) measurements of quasialigned silicon carbon nitride nanorods in the temperature range between 15 and 400 K were performed. The direct band-to-band transition energies Edg at various temperatures were determined accurately through line shape fit of the experimental PzR spectra. The temperature dependence of Edg is analyzed by the Varshni equation [Y. P. Varshni, Physica, (Amsterdam) 34, 149 (1967)] and an expression containing the Bose-Einstein occupation factor for phonons proposed by L. Viña, S. Logothetidis, and M. Cardona [Phys. Rev. B 30, 1979 (1984)]. The parameters that describe the temperature dependence of Edg are evaluated and discussed.

AB - Detailed piezoreflectance (PzR) measurements of quasialigned silicon carbon nitride nanorods in the temperature range between 15 and 400 K were performed. The direct band-to-band transition energies Edg at various temperatures were determined accurately through line shape fit of the experimental PzR spectra. The temperature dependence of Edg is analyzed by the Varshni equation [Y. P. Varshni, Physica, (Amsterdam) 34, 149 (1967)] and an expression containing the Bose-Einstein occupation factor for phonons proposed by L. Viña, S. Logothetidis, and M. Cardona [Phys. Rev. B 30, 1979 (1984)]. The parameters that describe the temperature dependence of Edg are evaluated and discussed.

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Piezoreflectance study of silicon carbon nitride nanorods

Abstract

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