We report observation of the piezoresistive effect of β-Ga2O3 and investigate its application for strain gauge sensors. Ti/Au ohmic contacts are fabricated on commercially procured β-Ga2O3 materials. We employ the transfer length measurement pattern to remove the influence of contact resistance on the resistance measurement of β-Ga2O3 samples, especially when measuring the relatively small piezoresistance change due to strain. A gauge factor of-5.8 ± 0.1 is measured from a Ti/Au-β-Ga2O3-Ti/Au structure under tensile uniaxial stress in the  direction at room temperature.
|Journal||Japanese journal of applied physics|
|Publication status||Published - 2019|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)