Piezoresistive effect and strain gauge application of β-Ga2O3

Yu Yao Lin; Shin Sheng Huang; Mau Phon Horng; Yuan Ta Hsieh; Ying Zong Juang; Jian V. Li

doi:10.7567/1347-4065/ab4c9c

Piezoresistive effect and strain gauge application of β-Ga₂O₃

Yu Yao Lin, Shin Sheng Huang, Mau Phon Horng, Yuan Ta Hsieh, Ying Zong Juang, Jian V. Li

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report observation of the piezoresistive effect of β-Ga₂O₃ and investigate its application for strain gauge sensors. Ti/Au ohmic contacts are fabricated on commercially procured β-Ga₂O₃ materials. We employ the transfer length measurement pattern to remove the influence of contact resistance on the resistance measurement of β-Ga₂O₃ samples, especially when measuring the relatively small piezoresistance change due to strain. A gauge factor of-5.8 ± 0.1 is measured from a Ti/Au-β-Ga₂O₃-Ti/Au structure under tensile uniaxial stress in the [010] direction at room temperature.

Original language	English
Article number	111003
Journal	Japanese journal of applied physics
Volume	58
Issue number	11
DOIs	https://doi.org/10.7567/1347-4065/ab4c9c
Publication status	Published - 2019

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/1347-4065/ab4c9c

Cite this

@article{63198ce347274188ae118b7eaa63c109,

title = "Piezoresistive effect and strain gauge application of β-Ga2O3 ",

abstract = "We report observation of the piezoresistive effect of β-Ga2O3 and investigate its application for strain gauge sensors. Ti/Au ohmic contacts are fabricated on commercially procured β-Ga2O3 materials. We employ the transfer length measurement pattern to remove the influence of contact resistance on the resistance measurement of β-Ga2O3 samples, especially when measuring the relatively small piezoresistance change due to strain. A gauge factor of-5.8 ± 0.1 is measured from a Ti/Au-β-Ga2O3-Ti/Au structure under tensile uniaxial stress in the [010] direction at room temperature.",

author = "Lin, {Yu Yao} and Huang, {Shin Sheng} and Horng, {Mau Phon} and Hsieh, {Yuan Ta} and Juang, {Ying Zong} and Li, {Jian V.}",

note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.",

year = "2019",

doi = "10.7567/1347-4065/ab4c9c",

language = "English",

volume = "58",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "11",

}

TY - JOUR

T1 - Piezoresistive effect and strain gauge application of β-Ga2O3

AU - Lin, Yu Yao

AU - Huang, Shin Sheng

AU - Horng, Mau Phon

AU - Hsieh, Yuan Ta

AU - Juang, Ying Zong

AU - Li, Jian V.

PY - 2019

Y1 - 2019

N2 - We report observation of the piezoresistive effect of β-Ga2O3 and investigate its application for strain gauge sensors. Ti/Au ohmic contacts are fabricated on commercially procured β-Ga2O3 materials. We employ the transfer length measurement pattern to remove the influence of contact resistance on the resistance measurement of β-Ga2O3 samples, especially when measuring the relatively small piezoresistance change due to strain. A gauge factor of-5.8 ± 0.1 is measured from a Ti/Au-β-Ga2O3-Ti/Au structure under tensile uniaxial stress in the [010] direction at room temperature.

AB - We report observation of the piezoresistive effect of β-Ga2O3 and investigate its application for strain gauge sensors. Ti/Au ohmic contacts are fabricated on commercially procured β-Ga2O3 materials. We employ the transfer length measurement pattern to remove the influence of contact resistance on the resistance measurement of β-Ga2O3 samples, especially when measuring the relatively small piezoresistance change due to strain. A gauge factor of-5.8 ± 0.1 is measured from a Ti/Au-β-Ga2O3-Ti/Au structure under tensile uniaxial stress in the [010] direction at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=85076606475&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85076606475&partnerID=8YFLogxK

U2 - 10.7567/1347-4065/ab4c9c

DO - 10.7567/1347-4065/ab4c9c

M3 - Article

AN - SCOPUS:85076606475

SN - 0021-4922

VL - 58

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11

M1 - 111003

ER -

Piezoresistive effect and strain gauge application of β-Ga₂O₃

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this