Piezoresistive effect and strain gauge application of β-Ga2O3

Yu Yao Lin, Shin Sheng Huang, Mau Phon Horng, Yuan Ta Hsieh, Ying Zong Juang, Jian V. Li

Research output: Contribution to journalArticle

Abstract

We report observation of the piezoresistive effect of β-Ga2O3 and investigate its application for strain gauge sensors. Ti/Au ohmic contacts are fabricated on commercially procured β-Ga2O3 materials. We employ the transfer length measurement pattern to remove the influence of contact resistance on the resistance measurement of β-Ga2O3 samples, especially when measuring the relatively small piezoresistance change due to strain. A gauge factor of-5.8 ± 0.1 is measured from a Ti/Au-β-Ga2O3-Ti/Au structure under tensile uniaxial stress in the [010] direction at room temperature.

Original languageEnglish
Article number111003
JournalJapanese Journal of Applied Physics
Volume58
Issue number11
DOIs
Publication statusPublished - 2019 Jan 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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