This paper presents a combinatorial methodology for fabricating orthorhombic ZnSnN2 (ZTN) by using Zn-Sn3N4 composition spreads. This study is the first to verify the substantial piezotronic and piezophototronic features of ZTN on the basis of asymmetric current-voltage (I-V) characteristics. Regarding the piezophototronic effect, at a -5 V bias, the current density was enhanced up to 2.5 times when the applied pressure increased from 0.625 to 2.5 GPa. Schottky barrier height variations at S1 and S2 were calculated under a pressure of 2.5 GPa and were observed to have increased and decreased by approximately 1.0 and 22 mV, respectively. The results clarified the I-V behavior and also supported the proposed energy-band structure evolution of piezotronic and piezophototronic ZTN. In addition, ZTN formation was verified through X-ray photoelectron spectroscopy and X-ray diffraction. A deconvolution algorithm was employed to validate the ratio of orthorhombic ZTN (Pna21) (approximately 30%). In addition, UV-vis spectrometry revealed that the energy bandgap of ZTN was approximately 2.0 eV.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics