PIN photocurrent studies of monolayer SimGen superlattices

V. P. Arbet-Engels; R. P.G. Karunasiri; K. L. Wang

doi:10.1117/12.20750

PIN photocurrent studies of monolayer SimGen superlattices

V. P. Arbet-Engels, R. P.G. Karunasiri, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

Abstract

PIN diodes whose intrinsic region s composed of a strained monolayer superlattice (SLS) have been fabricated by molecular beam epitaxy. The optical and geometrical properties of these structures as a function of the substrate orientation have been investigated. Transmission Electron Microscopy (TEM) and X-ray spectroscopy have been used to characterize the crystalline quality of the samples. The absorption spectra have been measured using photocurrent spectroscopy. Optical transitions extending well into the silicon bandgap have been observed. The type of the transition has been analyzed using envelope function approximation and curve fitting procedures.

Original language	English
Pages (from-to)	229-240
Number of pages	12
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1283
DOIs	https://doi.org/10.1117/12.20750
Publication status	Published - 1990 Oct 1
Event	Quantum Well and Superlattice Physics III 1990 - San Diego, United States Duration: 1990 Mar 17 → 1990 Mar 21

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.20750

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title = "PIN photocurrent studies of monolayer SimGen superlattices",

abstract = "PIN diodes whose intrinsic region s composed of a strained monolayer superlattice (SLS) have been fabricated by molecular beam epitaxy. The optical and geometrical properties of these structures as a function of the substrate orientation have been investigated. Transmission Electron Microscopy (TEM) and X-ray spectroscopy have been used to characterize the crystalline quality of the samples. The absorption spectra have been measured using photocurrent spectroscopy. Optical transitions extending well into the silicon bandgap have been observed. The type of the transition has been analyzed using envelope function approximation and curve fitting procedures.",

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AU - Arbet-Engels, V. P.

AU - Karunasiri, R. P.G.

AU - Wang, K. L.

PY - 1990/10/1

Y1 - 1990/10/1

N2 - PIN diodes whose intrinsic region s composed of a strained monolayer superlattice (SLS) have been fabricated by molecular beam epitaxy. The optical and geometrical properties of these structures as a function of the substrate orientation have been investigated. Transmission Electron Microscopy (TEM) and X-ray spectroscopy have been used to characterize the crystalline quality of the samples. The absorption spectra have been measured using photocurrent spectroscopy. Optical transitions extending well into the silicon bandgap have been observed. The type of the transition has been analyzed using envelope function approximation and curve fitting procedures.

AB - PIN diodes whose intrinsic region s composed of a strained monolayer superlattice (SLS) have been fabricated by molecular beam epitaxy. The optical and geometrical properties of these structures as a function of the substrate orientation have been investigated. Transmission Electron Microscopy (TEM) and X-ray spectroscopy have been used to characterize the crystalline quality of the samples. The absorption spectra have been measured using photocurrent spectroscopy. Optical transitions extending well into the silicon bandgap have been observed. The type of the transition has been analyzed using envelope function approximation and curve fitting procedures.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Quantum Well and Superlattice Physics III 1990

Y2 - 17 March 1990 through 21 March 1990

ER -

PIN photocurrent studies of monolayer SimGen superlattices

Abstract

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