PIN photocurrent studies of monolayer SimGen superlattices

V. P. Arbet-Engels, R. P.G. Karunasiri, K. L. Wang

Research output: Contribution to journalConference articlepeer-review


PIN diodes whose intrinsic region s composed of a strained monolayer superlattice (SLS) have been fabricated by molecular beam epitaxy. The optical and geometrical properties of these structures as a function of the substrate orientation have been investigated. Transmission Electron Microscopy (TEM) and X-ray spectroscopy have been used to characterize the crystalline quality of the samples. The absorption spectra have been measured using photocurrent spectroscopy. Optical transitions extending well into the silicon bandgap have been observed. The type of the transition has been analyzed using envelope function approximation and curve fitting procedures.

Original languageEnglish
Pages (from-to)229-240
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1990 Oct 1
EventQuantum Well and Superlattice Physics III 1990 - San Diego, United States
Duration: 1990 Mar 171990 Mar 21

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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