Pixel Circuit with Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays

Chih Lung Lin; Jui Hung Chang; Po Cheng Lai; Li Wei Shih; Sung Chun Chen; Mao Hsun Cheng

doi:10.1109/JEDS.2020.2974576

Pixel Circuit with Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays

Chih Lung Lin, Jui Hung Chang, Po Cheng Lai, Li Wei Shih, Sung Chun Chen, Mao Hsun Cheng

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion of the driving voltage at the gate node of the driving TFT. Based on the measured electrical characteristics of a fabricated p-type LTPS TFT, the HSPICE model is established to verify the feasibility of the proposed circuit. The analytical results indicate that the relative OLED current error rates are all below 4.73%, as the threshold voltage of TFT varies by ±0.5 V. Notably, the OLED current varies by only 2.94% during the emission period of 66.7 ms at a medium gray level, demonstrating the effectiveness of the leakage prevention scheme.

Original language	English
Article number	9001057
Pages (from-to)	235-240
Number of pages	6
Journal	IEEE Journal of the Electron Devices Society
Volume	8
DOIs	https://doi.org/10.1109/JEDS.2020.2974576
Publication status	Published - 2020

All Science Journal Classification (ASJC) codes

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/JEDS.2020.2974576

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@article{cb2719490008470e9d221233ed863082,

title = "Pixel Circuit with Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays",

abstract = "This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion of the driving voltage at the gate node of the driving TFT. Based on the measured electrical characteristics of a fabricated p-type LTPS TFT, the HSPICE model is established to verify the feasibility of the proposed circuit. The analytical results indicate that the relative OLED current error rates are all below 4.73%, as the threshold voltage of TFT varies by ±0.5 V. Notably, the OLED current varies by only 2.94% during the emission period of 66.7 ms at a medium gray level, demonstrating the effectiveness of the leakage prevention scheme.",

author = "Lin, {Chih Lung} and Chang, {Jui Hung} and Lai, {Po Cheng} and Shih, {Li Wei} and Chen, {Sung Chun} and Cheng, {Mao Hsun}",

note = "Funding Information: This work was supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan, in part by the Ministry of Science and Technology of Taiwan under Project MOST 107-2221-E-006-188-MY3, and in part by the AU Optronics Corporation. Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2020",

doi = "10.1109/JEDS.2020.2974576",

language = "English",

volume = "8",

pages = "235--240",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Pixel Circuit with Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays

AU - Lin, Chih Lung

AU - Chang, Jui Hung

AU - Lai, Po Cheng

AU - Shih, Li Wei

AU - Chen, Sung Chun

AU - Cheng, Mao Hsun

N1 - Funding Information: This work was supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan, in part by the Ministry of Science and Technology of Taiwan under Project MOST 107-2221-E-006-188-MY3, and in part by the AU Optronics Corporation. Publisher Copyright: © 2013 IEEE.

PY - 2020

Y1 - 2020

N2 - This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion of the driving voltage at the gate node of the driving TFT. Based on the measured electrical characteristics of a fabricated p-type LTPS TFT, the HSPICE model is established to verify the feasibility of the proposed circuit. The analytical results indicate that the relative OLED current error rates are all below 4.73%, as the threshold voltage of TFT varies by ±0.5 V. Notably, the OLED current varies by only 2.94% during the emission period of 66.7 ms at a medium gray level, demonstrating the effectiveness of the leakage prevention scheme.

AB - This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion of the driving voltage at the gate node of the driving TFT. Based on the measured electrical characteristics of a fabricated p-type LTPS TFT, the HSPICE model is established to verify the feasibility of the proposed circuit. The analytical results indicate that the relative OLED current error rates are all below 4.73%, as the threshold voltage of TFT varies by ±0.5 V. Notably, the OLED current varies by only 2.94% during the emission period of 66.7 ms at a medium gray level, demonstrating the effectiveness of the leakage prevention scheme.

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Pixel Circuit with Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays

Abstract

All Science Journal Classification (ASJC) codes

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